利用扫描电子显微镜(SEM)研究了在选择外延MOVPE生长InGaAsP材料中, 厚度增强因子随SiOz掩模 宽度的变化, 生长条件(如生长压力、ID族源流量等)对厚度增强因子的影响。随着生长压力的增加, 生长速率下 降,选择性增强；随着In源流量的增加,生长速率上升,选择性下降。制备了最大厚度增强因子达3.4的InGaAsP体材料。通过扫描电镜观察,得到了较平坦的生长界面和表面形貌。为用选择生长法制备分布反馈激光器与模斑转换器集成器件提供有效的方法。

The influence of growth conditions (such as growth pressure and the flux ratio of group ID precursor) and the widths of SiO2 mask upon the thickness enhancement factors of selectively grown InGaAsP were studied in this paper. The growth rate decreased and the selectivity increased with the increasing of the growth pressure; the growth rate increased and the selectivity decreased with the increasing of the flux ratio of group III precursor. The InGaAsP bulk material with high thickness enhancement factor was grown by selective MOVPE.