采用扫描电子显微镜和显微拉曼光谱仪研究了受脉冲激光损伤的CCD的形貌和光谱特性。在损伤表面上得到CCD各层的形貌，比较出不同层受激光损伤的先后次序，观察到感光区附近遮光层和多晶硅电极的破坏，研究深入到单个像素尺度；在截面上测得损伤区内部硅材料拉曼光谱特征峰红移，判定内部硅材料发生熔融，并造成表面多晶硅电极和基底短路，解释了CCD受皮秒激光热损伤完全失效的机理。

The morpha and spectral character of damaged CCD, which has been irradiated by picosecond pulsed laser, are studied by using scanning electron microscope and micro-Raman spectrometer. Morphological damaged images of different layers are observed on the surface of CCD. The damage sequence is decided by comparing different layers′ conditions with a scale as small as a single pixel. The damage status of W-shield and poly-Si around one pixel is observed. On the cross section, the red-shift of Raman spectrum of bulk silicon material is measured and it means that bulk silicon melts, which brings a short-circuit between surface poly-Si electrode and substrate. The short-circuit explains the thermal mechanism of complete failure.