介绍了InGaN紫外探测器的研制过程, 并给出了器件的性能。利用金属有机化学气相沉积(MOCVD)方法生长GaN外延材料, 通过刻蚀、钝化、欧姆接触电极等工艺, 制作了正照射单元In0.09Ga0.91N紫外探测芯片。并对该芯片进行了I-V特性、响应光谱等测试, 得到芯片的暗电流Id为1.00×10-12A, 零偏压电阻R0为1.20×109Ω。该紫外探测器在360~390nm范围内有较高的响应度, 峰值响应率在378nm波长处达到0.15A/W, 在考虑表面反射时, 内量子效率达到60%; 优质因子R0A为3.4×106Ω·cm2, 对应的探测率D*=2.18×1012cm·Hz1/2·W-1。

The fabrication and characterization of InGaN ultraviolet photodetector were reported in this work. GaN multilayers were grown with metal-organic chemical vapor deposition (MOCVD). Material etching, passivation, metal contact and other techniques were used in the manufacture of unit front-illuminated InGaN detector. The current-voltage (I-V) curve shows that the current and resistance at zero bias is 1.00×10-12A and 1.20×109Ω, respectively. A flat band spectral response is achieved in the 360～390nm. The detector displays an unbiased response of 0.15A/W at 378nm, corresponding to an internal quantum efficiency of 60%. The R0A values up to 3.4×106Ω·cm2 are obtained corresponding to D*=2.18×1012cm·Hz1/2·W-1.