PIN光探测器是光纤通信系统和网络中的关键器件。量子效率和响应带宽是衡量光探测器性能的重要指标, 并且这两个参数都与器件的吸收层密切相关。为了提高光探测器的性能, 提出了一种新型双吸收层光探测器(即PINIP结构), 利用侧腐蚀工艺减小双吸收层光探测器吸收层的结面积。对其性能进行了理论研究, 结果表明该器件的量子效率达到了93%, 同时响应带宽达到了26GHz, 比传统结构的双吸收层光探测器提高了44%。

As the key device for optical fiber communication systems and optical networks with high bit rate, the quantum efficiency and response bandwidth of PIN photodetector are the important indicators determining its performance, and the two parameters are associated with the dimension of absorbing layer. In order to improve the performance of the photodetector, it is proposed a novel design of dual-absorption layer photodetector with the PINIP structure and the junction area of the absorbing layer of the dual-absorption layer photodetector is reduced by adopting side etching process. Theory analysis and simulations perfromed on the new photodetector indicate that the quantum efficiency can reach 93% and the response bandwidth can achieve 26GHz, which is 44% higher than that of the dual-absorption layer photodetector with the same structure.