用脉冲激光制备纳米硅的过程中，在Purcell腔中会形成等离子体晶格结构，这是等离子体激元与光子相互作用的结果，其形成的等离子体晶格与Wigner晶体结构很相似。利用光致发光光谱研究局域态发光特征从而去控制纳米硅结构的发光，在氧气或氮气环境下制备纳米硅样品，由于表面键合作用形成电子局域态会产生几个特征发光峰，分别位于560、600 和700 nm 附近。在氧气环境下用激光照射硅晶片形成硅量子点，可以观察到样品的拉曼光谱随着测量温度的增加而产生频谱移动，这个过程伴随着声子能量的变化。温度较高时，光致发光峰强度下降，同时发射频谱变宽。在77 K 时，可以观察到光致发光峰的红移，这表明局域态发光在纳米硅发光的激活起着重要作用。在带隙中产生的局域态取决于表面键合的情况，表面键合可以激活硅量子点而增强发光。在硅薄膜上掺入稀土金属镱会形成电子局域态发光，可将电致发光的波长调控进入光通讯窗口。

The period pattern emission in the Purcell cavity from plasmonic lattice structure is observed due to interaction between plasmon and photon. It is observed in preparing nanosilicon by pulsed laser, which is similar with the Wigner crystal structure. Manipulation of emission in the Si nanostructures is studied by the photoluminescence spectroscopy. The surface bonding and electronic localized states are characterized by several emission bands, which peak near 560, 600 and 700 nm on samples prepared in oxygen or nitrogen environment. Silicon quantum dots (QDs) is fabricated by laser irradiation in oxygen environment. The peak-shift in Raman spectra can be observed with increasing temperature on samples, which shows the decrease of phonon energy. The peak intensity in photoluminescence (PL) decreases and the emission band becomes broader at higher temperature, meanwhile the red- shift of PL peak is observed at 77 K compared with that at 279 K, which indicates that the localized states emission plays a main role on the nanosilicon activated. The electroluminescence wavelength is measured in the telecom window on silicon film coated by ytterbium.