研究分析了采用 MBE技术外延中波碲镉汞薄膜原位 p-on-n材料生长结构及掺杂浓度。掌握了 MBE碲镉汞原位 p-on-n薄膜材料的生长温度、掺杂浓度和 p-n结界面的控制技术, 研究了原位 p-on-n材料杂质的电学激活退火技术。利用傅里叶变换红外透过测试拟合得到了材料的组分、厚度均匀性, 利用 X-ray双晶衍射测试结果分析了晶体质量, 并统计了材料的 EPD值。利用 SIMS测试分析了材料中杂质分布状况和浓度, 对台面器件 I-V特性曲线进行了测试分析。

This paper analyzed the in-situ p-on-n HgCdTe thin film growth structure and the doping concentration. The controlling methods of growth temperature, doping concentration and p-n interface of in-situ p-on-n thin film were obtained, as well as the in-situ p-on-n thin film annealing technology for exiting the impurity was studied. FTIR characteristic was used to analyze the uniformity of composition and thickness, X-ray double crystal diffraction was used to analyze the quality of the crystal, and the EPD was counted. The impurity distribution profile and concentration were tested by SIMS, and the I-V curve of the mesa device was measured and analyzed.