红外, 2016, 37 (10): 1, 网络出版: 2017-01-03
金掺杂HgCdTe气相外延生长及二次离子质谱研究
Study of Vapor Phase Epitaxy Growth of Au-doped Hg1-xCdxTe and its Secondary Ion Mass Spectrum
Hg1-xCdxTe晶体 二次离子质谱 气相外延 Au掺杂 杂质 Hg1-xCdxTe crystal secondary ion mass spectroscopy (SIMS) vapor phase epitaxial method Au-doped impurity
摘要
通过气相外延技术生长了Au掺杂的Hg1-xCdxTe薄膜材料。利用傅里叶光谱仪和金相显微镜对外延材料进行了表征。通过二次离子质谱(Secondary Ion Mass Spectroscopy, SIMS)技术分析了Au在Hg1-xCdxTe外延层以及CdZnTe衬底中的纵向分布趋势。利用SIMS技术还分析了I、II族和VI、VII族杂质在Hg1-xCdxTe外延层以及CdZnTe衬底中的纵向分布趋势,发现衬底和外延层的过渡区具有吸杂作用。研究结果对提高探测器的性能具有指导意义。
Abstract
Au-doped Hg1-xCdxTe epitaxial layer materials were grown by using a vapor phase epitaxial method. The layer materials were characterized by a Fourier spectrometer and a metallographic microscope. The longitudinal distribution trend of Au in the Hg1-xCdxTe epitaxial layer and CdZnTe substrate was analyzed by Secondary Ion Mass spectrometry (SIMS). In addition, the longitudinal distribution trend of I and II impurities and VI and VII impurities in the Hg1-xCdxTe epitaxial layer and CdZnTe substrate was also analyzed by SIMS. It was found that the transition region between the substrate and the epitaxial layer can absorb the impurities. This result is of significance to the improvement of detectors in performance.
王仍, 焦翠灵, 张莉萍, 陆液, 张可锋, 杜云辰, 李向阳. 金掺杂HgCdTe气相外延生长及二次离子质谱研究[J]. 红外, 2016, 37(10): 1. WANGReng, JIAO Cui-ling, ZHANG Li-ping, LU Ye, ZHANG Ke-feng, DU Yun-chen, LI Xiang-yang. Study of Vapor Phase Epitaxy Growth of Au-doped Hg1-xCdxTe and its Secondary Ion Mass Spectrum[J]. INFRARED, 2016, 37(10): 1.