对掺镓和掺硼的二种多晶硅钝化发射极和背面电池进行了电注入退火研究, 分别用Halm电学性能测试仪和量子效率测试仪分析了它们在不同条件处理后的电学性能和外量子效率变化.结果表明, 以8.0 A的注入电流在260℃的温度下处理2 h, 有利于促进电池由衰减态向再生态转变, 电注入退火后电池的转换效率增加了0.83%, 在光照5 h后比初始值仅衰减了0.61%.电注入退火能有效降低多晶硅钝化发射极和背面电池的光致衰减效应, 掺镓多晶硅钝化发射极和背面电池具有更低的光致衰减效应, 相比掺硼多晶硅钝化发射极和背面电池光致衰减值降低了约50%.

Electrical injection annealing effect was performed in gallium-doped and boron-doped multi-crystalline silicon Passivated Emitter And Rear Cells (PERC). The electrical properties and the external quantum efficiency of the solar cells with different treatments were measured by the Halm electrical performance tester and quantum efficiency tester respectively.The results show that the treatment with 8.0 A electric injection current at 260 ℃ for 2 h is beneficial to promote the transition from degradation to regeneration. The conversion efficiency is enhanced by 0.83% after electric injection annealing, and the degradation of its conversion efficiency is only 0.61% from virgin value after illumination for 5 h. The light induced degradation of multi-crystalline silicon PERC colud be reduced by electrical injection annealing, and the gallium-doped multi-crystalline silicon PERC solar cell has lower light induced degradation, which is reduced by about 50% compared with that in boron-doped multi-crystalline silicon PERC solar cell.