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具有渐变量子垒的氮极性AlGaN基LED实现载流子调控和性能增强

Carrier Manipulation and Performance Enhancement of N-polar AlGaN-based LED with Grading Quantum Barriers

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摘要

为了获得高效率的AlGaN基深紫外发光二极管, 提出了具有渐变量子垒的氮极性结构来调控载流子的传输.通过氮极性结构在p型电子阻挡层中形成的反向极化诱导势垒, 改善空穴注入和电子泄漏问题.另外研究了不同的渐变方向和渐变程度对器件性能的影响.模拟结果显示, 在12 nm的AlGaN量子垒上沿着(000-1)方向从Al组分0.65线性渐变到0.6, 可以有效平衡量子垒的势垒高度和斜率, 从而极大的增强空穴注入, 光输出功率相较于传统结构提高了53.6%.该设计为电子泄漏和空穴注入问题提供了直接而有效的解决方案, 在实现更高效率的深紫外发光二极管方面显示出广阔的前景.

Abstract

To achieve efficient AlGaN-based Deep Ultraviolet Light-Emitting Diode (DUV LED), the N-polar LED structure with grading quantum barriers is proposed to manipulate the carrier transport. By adopting the N-polar structure, the hole injection and the electron overflow issues can be improved due to the reversed polarization-induced potential barrier for carrier transport in p-type electron blocking layer. Furthermore, the impacts of different grading directions and schemes on the device performance are investigated. Simulation results show that grading the Al composition linearly from 0.65 to 0.6 for the 12 nm-thick AlGaN quantum barriers along the (000-1) can well balance the quantum barrier height and slope, thus resulting in remarkable improvement of hole injection as well as 53.6% enhancement of optical output power. The proposed design provides a straightforward and effective solution to the electron overflow and hole injection issues, which shows promise in the pursuit of higher efficiency DUV LED.

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中图分类号:TN312+.8

DOI:10.3788/gzxb20194807.0723001

基金项目:The National Key Research and Development Program of China (Nos. 2016YFB0400803, 2016YFB0400802, 2017YFB0404202), the National Natural Sciences Foundation of China (Nos. 61527814, 61674147, U1505253), Beijing Nova Program (No. Z181100006218007), Youth Innovation Promotion Association CAS (No. 2017157), King Abdullah University of Science and Technology (KAUST) Baseline (No. BAS/1/1664-01-01), KAUST Competitive Research Grant (Nos. URF/1/3437-01-01, URF/1/3771-01-01), KAUST GCC (No. REP/1/3189-01-01), National Natural Science Foundation of China (No. 61774065)

收稿日期:2019-04-02

修改稿日期:2019-05-05

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陆义:中国科学院半导体研究所 半导体照明研发中心, 北京 100083中国科学院大学 材料科学与光电技术学院, 北京 100049北京市第三代半导体材料及应用工程技术研究中心, 北京 100083阿卜杜拉国王科技大学 先进半导体实验室, 图沃 23955-6900,沙特阿拉伯
闫建昌:中国科学院半导体研究所 半导体照明研发中心, 北京 100083中国科学院大学 材料科学与光电技术学院, 北京 100049北京市第三代半导体材料及应用工程技术研究中心, 北京 100083
李晓航:阿卜杜拉国王科技大学 先进半导体实验室, 图沃 23955-6900,沙特阿拉伯
郭亚楠:中国科学院半导体研究所 半导体照明研发中心, 北京 100083中国科学院大学 材料科学与光电技术学院, 北京 100049北京市第三代半导体材料及应用工程技术研究中心, 北京 100083
吴卓辉:中国科学院半导体研究所 半导体照明研发中心, 北京 100083中国科学院大学 材料科学与光电技术学院, 北京 100049北京市第三代半导体材料及应用工程技术研究中心, 北京 100083
张亮:中国科学院半导体研究所 半导体照明研发中心, 北京 100083中国科学院大学 材料科学与光电技术学院, 北京 100049北京市第三代半导体材料及应用工程技术研究中心, 北京 100083
谷文:中国科学院半导体研究所 半导体照明研发中心, 北京 100083中国科学院大学 材料科学与光电技术学院, 北京 100049北京市第三代半导体材料及应用工程技术研究中心, 北京 100083
王军喜:中国科学院半导体研究所 半导体照明研发中心, 北京 100083中国科学院大学 材料科学与光电技术学院, 北京 100049北京市第三代半导体材料及应用工程技术研究中心, 北京 100083
李晋闽:中国科学院半导体研究所 半导体照明研发中心, 北京 100083中国科学院大学 材料科学与光电技术学院, 北京 100049北京市第三代半导体材料及应用工程技术研究中心, 北京 100083

联系人作者:陆义(luyi@semi.ac.cn)

备注:LU Yi (1995-), male, M.S. degree candidate, mainly focuses on the AlGaN-based LED.

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引用该论文

LU Yi,YAN Jian-chang,LI Xiao-hang,GUO Ya-nan,WU Zhuo-hui,ZHANG Liang,GU Wen,WANG Jun-xi,LI Jin-min. Carrier Manipulation and Performance Enhancement of N-polar AlGaN-based LED with Grading Quantum Barriers[J]. ACTA PHOTONICA SINICA, 2019, 48(7): 0723001

陆义,闫建昌,李晓航,郭亚楠,吴卓辉,张亮,谷文,王军喜,李晋闽. 具有渐变量子垒的氮极性AlGaN基LED实现载流子调控和性能增强[J]. 光子学报, 2019, 48(7): 0723001

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