Chinese Optics Letters, 2021, 19 (8): 082503, Published Online: Apr. 27, 2021   

Cascaded deep ultraviolet light-emitting diode via tunnel junction Download: 611次

Author Affiliations
1 School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
2 Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92037, USA
3 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract
The AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) is an alternative DUV light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power, which seriously hinder their commercialization. In this work, we design and report a tunnel-junction-cascaded (TJC) DUV LED, which enables multiple radiative recombinations within the active regions. Therefore, the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED. Correspondingly, the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25% at 60 mA.

Huabin Yu, Zhongjie Ren, Muhammad Hunain Memon, Shi Fang, Danhao Wang, Zhongling Liu, Haochen Zhang, Feng Wu, Jiangnan Dai, Changqing Chen, Haiding Sun. Cascaded deep ultraviolet light-emitting diode via tunnel junction[J]. Chinese Optics Letters, 2021, 19(8): 082503.

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