[1] 王立军, 宁永强, 秦 莉, 等. 大功率半导体激光器研究进展［J］. 发光学报, 2015, 36(1): 1-19.

    Wang Lijun, Ning Yongqiang, Qin Li, et al. Development of high power diode laser［J］. Chinese Journal of Luminescence, 2015, 36(1): 1-19.

[2] 黄德修. 半导体光电子学［M］. 北京: 电子工业出版社, 2013: 140-144.

    Huang Dexiu. Semiconductor optoelectronics［M］. Beijing: Publishing House of Electronics Industry, 2013:140-144.

[3] 王启明. 中国半导体激光器的历次突破与发展［J］. 中国激光, 2010, 37(9): 2190-2197.

    Wang Qiming. Breakthroughs and developments of semiconductor laser in China［J］. Chinese J Lasers, 2010, 37(9): 2190-2197.

[4] 邹德恕, 崔碧峰, 李建军, 等. 隧道带间耦合级联新型激光器扩展电流的优化［J］. 光电子·激光, 2001, 12(10): 989-991.

    Zou Deshu, Cui Bifeng, Li Jianjun, et al. Optimization on the expanding current of novel inter-band tunnel cascade coupled lasers［J］. Journal of Optoelectronic·Laser, 2001, 12(10): 989-991.

[5] 郑晓刚, 李 特, 芦 鹏, 等. 980 nm半导体激光器腔面温度特性分析［J］. 中国激光, 2013, 40(11): 1102004.

    Zheng Xiaogang, Li Te, Lu Peng, et al. Analysis of temperature characteristics of 980 nm semiconductor laser［J］. Chinese J Lasers, 2013, 40(11): 1102004.

[6] 李建军, 崔碧峰, 邓 军, 等. 非对称超大光腔980 nm大功率半导体激光器［J］. 中国激光, 2013, 40(11): 1102011.

    Li Jianjun, Cui Bifeng , Deng Jun, et al. 980 nm high power semiconductor laser with asymmetric supper large optical cavity［J］. Chinese J Lasers, 2013, 40(11): 1102011.

[7] 江剑平. 半导体激光器［M］. 北京: 电子工业出版社, 2000: 52-54.

    Jiang Jianping. Semiconductor laser［M］. Beijing: Publishing House of Electronics Industry, 2000: 52-54.