电流的侧向限制对半导体激光器具有重要意义，在半导体激光器有源区加入侧向限制结构一方面可以实现侧向限制，另一方面可以在一定范围内降低阈值电流密度。但是常规的侧向限制方法无论是侧向波导结构还是浅隔离槽结构都无法高效地抑制电流的侧向扩展。设计了新型的深隔离槽结构，利用Comsol软件仿真模拟侧向限制，发现深度超过外延层厚度的深隔离槽结构能更有效地提高电流的注入效率。在工艺中利用感应耦合等离子体刻蚀在距离脊型台两侧100 μm的位置刻蚀深度为4 μm的深隔离槽。实验结果表明，工作电流为5 A时，腔长4 mm具有深隔离槽结构的半导体激光器芯片输出功率为 3.6 W，阈值电流为0.3 A,阈值电流密度为78.95 A/cm2。结果表明新型深隔离槽结构可以有效抑制电流的侧向扩展。

Lateral confinement of the current is significant to semiconductor lasers. Lateral confinement can be achieved and threshold current density can be decreased in certain range if lateral confinement structure is embedded in active region of semiconductor lasers. But conventional lateral confinement method cannot suppress the lateral spread current effectively no matter whether lateral waveguide structure or shallow isolation groove is adopted. A new type of deep isolation groove structure is proposed, and lateral confinement is stimulated based on Comsol software. The deep isolation groove structure with etching depth more than the thickness of epitaxial layer is more effective when enhancing current injection efficiency. Two deep isolation grooves of 4 μm depth located at 100 μm away from the ridge type at both sides are etched by inductively coupled plasma etching. Experimental results show that, given the current of 5 A, the output power of semiconductor laser chip with cavity length of 4 mm and deep isolation groove is 3.6 W. The threshold current is 0.3 A. The threshold current density is 78.95 A/cm2. It indicates that the new type of deep isolation groove structure can suppress the lateral spread of the current effectively.