[1] Yazdan Mehr M, van Driel W D, Koh S, et al. . Reliability and optical properties of LED lens plates under high temperature stress[J]. Microelectronics Reliability, 2014, 54(11): 2440-2447.

[2] Li XP, ChenL, ChenM. An approach of LED lamp system lifetime prediction[C]∥2011 IEEE International Conference on Quality and Reliability, September 14-17, 2011, Bangkok, Thailand. New York: IEEE, 2011: 110- 114.

[3] Trevisanello L, Meneghini M, Mura G, et al. Accelerated life test of high brightness light emitting diodes[J]. IEEE Transactions on Device and Materials Reliability, 2008, 8(2): 304-311.

[4] 邹水平, 吴柏禧, 万珍平, 等. 电-热应力对GaN基白光LED可靠性的影响[J]. 发光学报, 2016, 37(1): 124-129.

    Zou S P, Wu B X, Wan Z P, et al. Effect of current-temperature stress on the reliability of GaN LED[J]. Chinese Journal of Luminescence, 2016, 37(1): 124-129.

[5] 王健, 黄先, 刘丽, 等. 温度和电流对白光 LED发光效率的影响[J]. 发光学报, 2008, 29(2): 358-362.

    Wang J, Huang X, Liu L, et al. Effect of temperature and current on LED luminous efficiency[J]. Chinese Journal of Luminescence, 2008, 29(2): 358-362.

[6] 肖承地, 刘春军, 刘卫东, 等. 基于加速性能退化的 LED 灯具可靠性评估[J]. 发光学报, 2014, 35(9): 1143-1153.

    Xiao C D, Liu C J, Liu W D, et al. Reliability assessment of LED lamp based on acceleration degradation test[J]. Chinese Journal of Luminescence, 2014, 35(9): 1143-1153.

[7] WagnerM, HerzogA, GanevH, et al. LED aging acceleration: An analysis from measuring and aging data of 14000 hours LED degradation[C]∥2015 12th China International Forum on Solid State Lighting (SSLCHINA), November 2-4, 2015, Shenzhen, China. New York: IEEE, 2015: 75- 78.

[8] 吴艳艳, 冯士维, 乔彦斌, 等. 电流拥挤效应与LED器件可靠性分析[J]. 发光学报, 2013, 34(8): 1051-1056.

    Wu Y Y, Feng S W, Qiao Y B, et al. Study of current crowding effect and reliability of LED devices[J]. Chinese Journal of Luminescence, 2013, 34(8): 1051-1056.

[9] MeneghessoG, LevadaS, PierobonR, et al. Degradation mechanisms of GaN-based LEDs after accelerated DC current aging[C]∥Digest. International Electron Devices Meeting, December 8-11, 2002, San Francisco, CA, USA. New York: IEEE, 2002: 103- 106.

[10] 钱敏华, 林燕丹, 孙耀杰. 基于光-电-热-寿命理论的LED寿命预测模型[J]. 光学学报, 2012, 32(8): 0823001.

    Qian M H, Lin Y D, Sun Y J. Lifeprediction model for LEDs based on the photo-electro-thermal-life theory[J]. Acta Optica Sinica, 2012, 32(8): 0823001.

[11] 杨少华, 吴福根, 张春华. 白光LED的失效机理分析[J]. 半导体光电, 2009, 30(6): 857-859, 882.

    Yang S H, Wu F G, Zhang C H. Analysis offailure mechanisms of white LEDs[J]. Semiconductor Optoelectronics, 2009, 30(6): 857-859, 882.

[12] Chan CJ, Hsu FM, Su YF, et al. Study on current and junction temperature stress aging effect for accelerated aging test of Light emitting diodes[C]∥2016 International Conference on Electronics Packaging (ICEP), April 20-22, 2016, Sapporo, Japan. New York: IEEE, 2016: 62- 65.

[13] Narendran N, Bullough J D, Maliyagoda N, et al. What is useful life for white light LEDs?[J]. Journal of the Illuminating Engineering Society, 2001, 30(1): 57-67.

[14] 王鋆. LED灯的寿命预估方法研究[D]. 上海: 复旦大学, 2011.

    WangY. The Research of LED Lamp Lifetime Prediction Methodology[D]. Shanghai: Fudan University, 2011.

[15] CaiM, Yang DG, KohS, et al. Accelerated testing method of LED luminaries[C]∥2012 13th International Thermal, Mechanical and Multi-PhysicsSimulation and Experiments inMicroelectronics and Microsystems, April 16-18, 2012, Cascais, Portugal. New York: IEEE, 2012: 1/6-6/6.

[16] 袁飞. 基于电流和温度双重应力加速的LED可靠性技术研究[D]. 桂林: 桂林电子科技大学, 2014.

    YuanF. The study on LED reliability under the condition of current-temperature double accelerated stress[D]. Guilin: Guilin University of Electronic Technology, 2014.

[17] MeneghessoG, LevadaS, ZanoniE, et al. Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels[C]∥2004 IEEE International Reliability Physics Symposium. Proceedings, April 25-29, 2004, Phoenix, AZ, USA. New York: IEEE, 2004: 474- 478.

[18] Wu FG, ZhaoW, Yang SH, et al. Failure modes and failure analysis of white LEDs[C]∥2009 9th International Conference on Electronic Measurement & Instruments, August 16-19, 2009, Beijing, China. New York: IEEE, 2009: 4-978-4-981.

[19] Chang M H, Das D, Varde P V, et al. Light emitting diodes reliability review[J]. Microelectronics Reliability, 2012, 52(5): 762-782.

[20] Jung E, Kim H. Rapidoptical degradation of GaN-based light-emitting diodes by a current-crowding-induced self-accelerating thermal process[J]. IEEE Transactions on Electron Devices, 2014, 61(3): 825-830.

[21] Jung E, Kim S, Kim H. Effects oftemperature on current crowding of GaN-based light-emitting diodes[J]. IEEE Electron Device Letters, 2013, 34(2): 277-279.

[22] Jeong S, Kim M S, Lee S N, et al. Forward and reverse current aging of GaN-based light-emitting diodes fabricated with Ag-based reflective electrodes[J]. Materials Science in Semiconductor Processing, 2019, 90: 72-77.

[23] Chan CJ, Hsu FM, Su YF, et al. Study on current and junction temperature stress aging effect for accelerated aging test of light emitting diodes[C]∥2016 International Conference on Electronics Packaging (ICEP), April 20-22, 2016, Sapporo, Japan. New York: IEEE, 2016: 62- 65.

[24] 何况. LED寿命预测技术[D]. 杭州: 杭州电子科技大学, 2011.

    HeK. Techniques of predicting life of LED[D]. Hangzhou: Hangzhou Dianzi University, 2011.