半导体光电, 2017, 38 (3): 342, 网络出版: 2017-07-10  

铌酸锂低半波电压电光调制器研究

Study on Low Half-wave Voltage Electro-optic Modulator Based on Lithium Niobate
作者单位
1 全球能源互联网研究院, 北京 102209
2 电子科技大学 通信与信息工程学院, 成都 611731
摘要
对降低铌酸锂(LN)电光调制器的半波电压进行了研究, 探索了利用反射结构实现低半波电压的原理。通过退火质子交换工艺在x切LN晶片上制作了反射结构的LN电光调制器。测试表明, 这种反射结构的LN电光调制器在保持器件长度不变的条件下可以降低半波电压。
Abstract
This paper focuses on lowering the half-wave voltage of lithium niobate (LN) electro-optic modulator. The principle of realizing the low half-wave voltage by the reflection structure is investigated. A reflection type electro-optic modulator is proposed and fabricated with x-cut LN crystal through the annealed proton-exchanged process. Preliminary results prove that the proposed reflection type LN electro-optic modulator can lower the half-wave voltage without increasing the length of device.
参考文献

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陈硕, 刘占元, 牛晓晨, 李学鹏, 陈开鑫. 铌酸锂低半波电压电光调制器研究[J]. 半导体光电, 2017, 38(3): 342. CHEN Shuo, LIU Zhanyuan, NIU Xiaochen, LI Xuepeng, CHEN Kaixin. Study on Low Half-wave Voltage Electro-optic Modulator Based on Lithium Niobate[J]. Semiconductor Optoelectronics, 2017, 38(3): 342.

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