GaN垒层厚度渐变的双蓝光波长发光二极管

李正凯; 严启荣; 罗长得; 肖汉章; 章勇

doi:doi:10.3788/gzxb20134207.0757

光子学报, 2013, 42 (7): 757, 网络出版: 2013-07-16

GaN垒层厚度渐变的双蓝光波长发光二极管

Dual-blue Wavelength Light-emitting Diodes Based on Varied GaN Barrier Thickness

论文大纲

李正凯 ^*严启荣罗长得肖汉章章勇

作者单位

华南师范大学光电子材料与技术研究所, 广州 510631

垒层厚度 InGaN/GaN量子阱双蓝光波长 GaN GaN Barrier thickness InGaN/GaN quantum well Dual-blue wavelength

摘要

针对单蓝光波长芯片与Y3Al5O12∶Ce3+黄光荧光粉封装白光发光二极管存在显色性不足的问题, 提出了采用双蓝光波长芯片激发Y3Al5O12∶Ce3+黄光荧光粉实现高显色性白光发射法, 并分析了其可行性. 利用金属有机化学气相沉积系统在(0001)蓝宝石衬底上顺序生长两个In0.18Ga0.82N/GaN量子阱和两个In0.12Ga0.88N/GaN量子阱的双蓝光波长发光二极管, 并对不同GaN垒层厚度的双蓝光波长发光二极管的光电性能进行分析, 结果表明沿n-GaN到p-GaN方向减小GaN垒层厚度能实现双蓝光发射, 并有较好的发光效率. 交流阻抗谱结果显示相关双蓝光波长发光二极管可以用一个电阻Rp与电容Cp并联后与一个Rs串联电路来模拟, GaN垒层变化能调节并联电阻和电容, 对串联电阻没有影响. 此外, 基于垒层减小的双蓝光波长芯片激发Y3Al5O12∶Ce3+荧光粉实现了高显色指数的白光发射.

Abstract

Due to low color rendering index of white light-emitting diodes based on packing of single-blue wavelength chip and Y3Al5O12∶Ce3+ yellow phosphors, using dual-blue wavelength chip, Y3Al5O12∶Ce3+ yellow phoshpor is proposed to realize high color rendering index white emission, and feasibility of the method is analyzed. Dual-blue wavelength light-emitting diodes based on two pairs of In0.18Ga0.82N/GaN quantum-well and two pairs of In0.12Ga0.88N/GaN quantum-well structure were grown sequentially on the same sapphire substrate by metal-organic chemical vapor deposition. Optoelectronic properties of dual-wavelength light-emitting diodes with different GaN barrier thicknesses were also studied. The experimental results indicate that efficient dual-blue-wavelength emission and higher luminescent efficiency are realized from light-emitting diodes by reducing GaN barrier thickness from n-GaN to p-GaN. The a. c. impedance spectroscopy can be explained in terms of the equivalent series circuit model of a set of parallel resistor-capacitor RpCp and a resistor Rs for the dual-blue wavelength light-emitting diodes. Varied GaN barrier thickness can tune parallel resistor and capacitor while it has no effect on series resistor. In addition, Y3Al5O12∶Ce3+ phosphor-converted white light emission with high color rendering index is achieved by use of dual-blue emitting active regions from reducing barrier thickness.

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李正凯, 严启荣, 罗长得, 肖汉章, 章勇. GaN垒层厚度渐变的双蓝光波长发光二极管[J]. 光子学报, 2013, 42(7): 757. LI Zheng-kai, YAN Qi-rong, LUO Chang-de, XIAO Han-zhang, ZHANG Yong. Dual-blue Wavelength Light-emitting Diodes Based on Varied GaN Barrier Thickness[J]. ACTA PHOTONICA SINICA, 2013, 42(7): 757.

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