GaN-based ultraviolet microdisk laser diode grown on Si

Jin Wang; Meixin Feng; Rui Zhou; Qian Sun; Jianxun Liu; Yingnan Huang; Yu Zhou; Hongwei Gao; Xinhe Zheng; Masao Ikeda; Hui Yang

doi:doi:10.1364/PRJ.7.000B32

Photonics Research, 2019, 7 (6): 06000B32, Published Online: May. 20, 2019

GaN-based ultraviolet microdisk laser diode grown on Si Download： 542次

Jin Wang ^1,2Meixin Feng ^1,3,4,5Rui Zhou ^1,4Qian Sun ^1,3,4,6Jianxun Liu ¹Yingnan Huang ^1,3,4Yu Zhou ^1,3,4Hongwei Gao ^1,3Xinhe Zheng ²Masao Ikeda ¹Hui Yang ^1,4

Author Affiliations

¹ Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

² University of Science and Technology Beijing, Beijing 100083, China

³ Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang 330200, China

⁴ School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China

⁵ e-mail: mxfeng2011@sinano.ac.cn

⁶ e-mail: qsun2011@sinano.ac.cn

Figures & Tables

Fig. 1. (a) Cross-sectional transmission electron microscopy (TEM) image, (b) double crystal X-ray rocking curves for the AlGaN (0002) and (101¯2) planes of the NUV LD structure grown on Si, and (c) AFM surface image of the AlGaN grown on Si.

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Fig. 2. (a), (c) Schematics and (b), (d) SEM images of the (a), (b) microring LD and (c), (d) microdisk LDs with air-bridge electrodes.

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Fig. 3. Schematic process flow of the microdisk LD structure with an air-bridge electrode.

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Fig. 4. (a) EL spectra of the microdisk LD with a radius of 12 μm measured under various pulsed electrical currents. (b) FWHM of the EL spectra and integrated intensity of the EL spectra as a function of the injection current. The pulse width and repetition rate were 400 ns and 10 kHz, respectively.

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Fig. 5. Threshold current, I_th, as a function of the inner circle radius for the microring LDs with an outer circle radius, R, of 20 μm.

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Jin Wang, Meixin Feng, Rui Zhou, Qian Sun, Jianxun Liu, Yingnan Huang, Yu Zhou, Hongwei Gao, Xinhe Zheng, Masao Ikeda, Hui Yang. GaN-based ultraviolet microdisk laser diode grown on Si[J]. Photonics Research, 2019, 7(6): 06000B32.

GaN-based ultraviolet microdisk laser diode grown on Si Download： 542次

Fig. 1. (a) Cross-sectional transmission electron microscopy (TEM) image, (b) double crystal X-ray rocking curves for the AlGaN (0002) and (101¯2) planes of the NUV LD structure grown on Si, and (c) AFM surface image of the AlGaN grown on Si.

Fig. 2. (a), (c) Schematics and (b), (d) SEM images of the (a), (b) microring LD and (c), (d) microdisk LDs with air-bridge electrodes.

Fig. 3. Schematic process flow of the microdisk LD structure with an air-bridge electrode.

Fig. 5. Threshold current, I_th, as a function of the inner circle radius for the microring LDs with an outer circle radius, R, of 20 μm.

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GaN-based ultraviolet microdisk laser diode grown on Si Download： 542次

Fig. 1. (a) Cross-sectional transmission electron microscopy (TEM) image, (b) double crystal X-ray rocking curves for the AlGaN (0002) and (101¯2) planes of the NUV LD structure grown on Si, and (c) AFM surface image of the AlGaN grown on Si.

Fig. 2. (a), (c) Schematics and (b), (d) SEM images of the (a), (b) microring LD and (c), (d) microdisk LDs with air-bridge electrodes.

Fig. 3. Schematic process flow of the microdisk LD structure with an air-bridge electrode.

Fig. 5. Threshold current, Ith, as a function of the inner circle radius for the microring LDs with an outer circle radius, R, of 20 μm.

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Fig. 5. Threshold current, I_th, as a function of the inner circle radius for the microring LDs with an outer circle radius, R, of 20 μm.