Photonics Research, 2019, 7 (4): 040000B1, Published Online: Apr. 11, 2019
Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes
Basic Information
DOI: | 10.1364/prj.7.0000b1 |
中图分类号: | -- |
栏目: | Semiconductor UV Photonics |
项目基金: | National Natural Science Foundation of China (NSFC)10.13039/501100001809 (51502074)、 Natural Science Foundation of Hebei Province10.13039/501100003787 (F2017202052)、 Natural Science Foundation of Tianjin City10.13039/501100006606 (16JCYBJC16200)、 Program for Top 100 Innovative Talents in Colleges and Universities of Hebei Province (SLRC2017032)、 Program for 100-Talent-Plan of Hebei Province (E2016100010). |
收稿日期: | Dec. 12, 2018 |
修改稿日期: | -- |
网络出版日期: | Apr. 11, 2019 |
通讯作者: | Hao-Chung Kuo (hckuo@faculty.nctu.edu.tw) |
备注: | -- |
Zi-Hui Zhang, Jianquan Kou, Sung-Wen Huang Chen, Hua Shao, Jiamang Che, Chunshuang Chu, Kangkai Tian, Yonghui Zhang, Wengang Bi, Hao-Chung Kuo. Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes[J]. Photonics Research, 2019, 7(4): 040000B1.