Photonics Research, 2019, 7 (4): 040000B1, Published Online: Apr. 11, 2019  

Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

Author Affiliations
1 Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
2 e-mail: zh.zhang@hebut.edu.cn
3 Department of Photonics and Institute of Electro-Optical Engineering, Taiwan Chiao Tung University, Hsinchu 30010, China
4 Department of Electrical Engineering and Computer Sciences and TBSI, University of California at Berkeley, Berkeley, California 94720, USA
知识挖掘

Zi-Hui Zhang, Jianquan Kou, Sung-Wen Huang Chen, Hua Shao, Jiamang Che, Chunshuang Chu, Kangkai Tian, Yonghui Zhang, Wengang Bi, Hao-Chung Kuo. Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes[J]. Photonics Research, 2019, 7(4): 040000B1.

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