Erbium-doped TeO2-coated Si3N4 waveguide amplifiers with 5 dB net gain: erratum

Henry C. Frankis; Hamidu M. Mbonde; Dawson B. Bonneville; Chenglin Zhang; Richard Mateman; Arne Leinse; Jonathan D. B. Bradley

doi:doi:10.1364/PRJ.393912

Photonics Research, 2020, 8 (6): 06001022, Published Online: Jun. 1, 2020

Erbium-doped TeO₂-coated Si₃N₄ waveguide amplifiers with 5 dB net gain: erratum Download： 519次

Henry C. Frankis ^1,*Hamidu M. Mbonde ¹Dawson B. Bonneville ¹Chenglin Zhang ¹Richard Mateman ²Arne Leinse ²Jonathan D. B. Bradley ¹

Author Affiliations

¹ Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada

² LioniX International BV, Enschede AL 7500, The Netherlands

Figures & Tables

Fig. 2. Diagram of the double-side pumping setup used to measure gain on the TeO2:Er3+-coated Si3N4 chips. (b) Image of the chip showing the characteristic green light emission of erbium when pumping the paperclip waveguide.

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Table1. Parameters Used for ${TeO}_{2} : {Er}^{3 +}$ Rate Equation Model

Parameter	Value
${Er}^{3 +}$ ion concentration	$2.2 \times 10^{20} ions / {cm}^{3}$
970 nm background propagation loss	2.5 dB/cm
1470 nm background propagation loss	0.25 dB/cm
1558 nm background propagation loss	0.25 dB/cm
Launched signal power	$- 20 dBm$
Upconversion parameter	$2.7 \times 10^{- 18} {cm}^{3} / s$
${}^{4}{I_{13 / 2}}$ lifetime	0.48 ms
${}^{4}{I_{11 / 2}}$ lifetime	0.04 ms
970 nm absorption/emission cross section	$2.8 / 2.8 \times 10^{- 21} {cm}^{2}$
1470 nm absorption/emission cross section	$3.0 / 0.4 \times 10^{- 21} {cm}^{2}$
1558 nm absorption/emission cross section	$3.5 / 4.4 \times 10^{- 21} {cm}^{2}$

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Henry C. Frankis, Hamidu M. Mbonde, Dawson B. Bonneville, Chenglin Zhang, Richard Mateman, Arne Leinse, Jonathan D. B. Bradley. Erbium-doped TeO₂-coated Si₃N₄ waveguide amplifiers with 5 dB net gain: erratum[J]. Photonics Research, 2020, 8(6): 06001022.

Erbium-doped TeO₂-coated Si₃N₄ waveguide amplifiers with 5 dB net gain: erratum Download： 519次

Fig. 2. Diagram of the double-side pumping setup used to measure gain on the TeO2:Er3+-coated Si3N4 chips. (b) Image of the chip showing the characteristic green light emission of erbium when pumping the paperclip waveguide.

Table1. Parameters Used for ${TeO}_{2} : {Er}^{3 +}$ Rate Equation Model

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Erbium-doped TeO2-coated Si3N4 waveguide amplifiers with 5 dB net gain: erratum Download： 519次

Fig. 2. Diagram of the double-side pumping setup used to measure gain on the TeO2:Er3+-coated Si3N4 chips. (b) Image of the chip showing the characteristic green light emission of erbium when pumping the paperclip waveguide.

Table1. Parameters Used for TeO2:Er3+ Rate Equation Model

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Erbium-doped TeO₂-coated Si₃N₄ waveguide amplifiers with 5 dB net gain: erratum Download： 519次

Table1. Parameters Used for ${TeO}_{2} : {Er}^{3 +}$ Rate Equation Model