强激光与粒子束, 2011, 23 (5): 1267, 网络出版: 2011-05-27   

杂质对溶胶-凝胶SiO2薄膜激光损伤的影响

Influence of impurities on laser-induced damage of sol-gel SiO2 films
作者单位
1 中国工程物理研究院 激光聚变研究中心, 四川 绵阳 621900
2 电子科技大学 物理电子学院, 成都 610054
摘要
采用溶胶-凝胶法制备了含有吸收性杂质和非吸收性杂质的SiO2增透膜, 采用波长为1 064 nm的激光对其进行了小光斑激光预处理, 对比研究了预处理前后的激光损伤差异, 研究表明:激光预处理对于洁净的SiO2薄膜影响不大;含10 μm SiO2颗粒杂质的样品微透镜效应很明显, 容易成为损伤起始的种子, 激光预处理后情况有所改善;含有CeO2颗粒杂质的样品表现出了很强的吸收性质, 损伤阈值降低到不足洁净样品的一半。所有样品激光预处理后损伤形貌未发生变化, 透光率峰值均有约50 nm的蓝移。
Abstract
Three kinds of anti-reflective SiO2 films, without impurities, with SiO2 particulate impurities and with CeO2 particulate impurities, were deposited on K9 glass by sol-gel dip-coating method. The influence of impurities on laser-induced damage of films was investigated before and after preconditioning with a 1 064 nm Nd:YAG pulsed laser. No obvious change in morphologies and damage threshold appears for pure films after conditioning. For the films with SiO2 impurities, 10 μm-size SiO2 particles show obvious micro-focusing effect and act as damage-initiating seeds, which can be removed by conditioning. Moreover, the samples with CeO2 impurities have intense absorbing character, and their laser-induced damage threshold is less than half of the others’. After the raster manner laser conditioning, transmittance peaks of all the samples shift to short-wave side about 50 nm with their laser-induced damage morphologies unchanged.
参考文献

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章春来, 李熙斌, 吕海兵, 袁晓东, 王治国, 祖小涛. 杂质对溶胶-凝胶SiO2薄膜激光损伤的影响[J]. 强激光与粒子束, 2011, 23(5): 1267. Zhang Chunlai, Li Xibin, Lü Haibing, Yuan Xiaodong, Wang Zhiguo, Zu Xiaotao. Influence of impurities on laser-induced damage of sol-gel SiO2 films[J]. High Power Laser and Particle Beams, 2011, 23(5): 1267.

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