Photonics Research, 2018, 6 (4): 04000290, Published Online: Aug. 1, 2018
High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator Download: 689次
Basic Information
DOI: | 10.1364/PRJ.6.000290 |
中图分类号: | -- |
栏目: | Integrated Optics |
项目基金: | National Research Foundation Singapore (NRF) |
收稿日期: | Dec. 28, 2017 |
修改稿日期: | Feb. 1, 2018 |
网络出版日期: | Aug. 1, 2018 |
通讯作者: | Kwang Hong Lee (Kwanghong@smart.mit.edu) |
备注: | -- |
Yue Wang, Bing Wang, Wardhana A. Sasangka, Shuyu Bao, Yiping Zhang, Hilmi Volkan Demir, Jurgen Michel, Kenneth Eng Kian Lee, Soon Fatt Yoon, Eugene A. Fitzgerald, Chuan Seng Tan, Kwang Hong Lee. High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator[J]. Photonics Research, 2018, 6(4): 04000290.