High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

Yue Wang; Bing Wang; Wardhana A. Sasangka; Shuyu Bao; Yiping Zhang; Hilmi Volkan Demir; Jurgen Michel; Kenneth Eng Kian Lee; Soon Fatt Yoon; Eugene A. Fitzgerald; Chuan Seng Tan; Kwang Hong Lee

doi:doi:10.1364/PRJ.6.000290

Photonics Research, 2018, 6 (4): 04000290, Published Online: Aug. 1, 2018

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator Download： 691次

Yue Wang ¹Bing Wang ¹Wardhana A. Sasangka ¹Shuyu Bao ^1,2Yiping Zhang ²Hilmi Volkan Demir ²Jurgen Michel ^1,3Kenneth Eng Kian Lee ¹Soon Fatt Yoon ^1,2Eugene A. Fitzgerald ^1,3Chuan Seng Tan ^1,2,4Kwang Hong Lee ^1,*

Author Affiliations

¹ Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602, Singapore

² School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

³ Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

⁴ e-mail: tancs@ntu.edu.sg

Copy Citation Text

Yue Wang, Bing Wang, Wardhana A. Sasangka, Shuyu Bao, Yiping Zhang, Hilmi Volkan Demir, Jurgen Michel, Kenneth Eng Kian Lee, Soon Fatt Yoon, Eugene A. Fitzgerald, Chuan Seng Tan, Kwang Hong Lee. High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator[J]. Photonics Research, 2018, 6(4): 04000290.

References

[1] H. Jiang, J. Lin. Nitride micro-LEDs and beyond—a decade progress review. Opt. Express, 2013, 21: A475-A484.

[2] NakamuraS.FasolG., The Blue Laser Diode (Springer, 1997).

[3] S. Muthu, F. Schuurmans, M. D. Pashley. Red, green, and blue LEDs for white light illumination. IEEE J. Sel. Top. Quantum Electron., 2002, 8: 333-338.

[4] K. H. Lee, S. Bao, L. Zhang, D. Kohen, E. Fitzgerald, C. S. Tan. Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process. Appl. Phys. Express, 2016, 9: 086501.

[5] K. H. Lee, S. Bao, E. Fitzgerald, C. S. Tan. Integration of III-V materials and Si-CMOS through double layer tranfer process. Jpn. J. Appl. Phys., 2015, 54: 030209.

[6] NunoueS.-Y.HikosakaT.YoshidaH.TajimaJ.KimuraS.SugiyamaN.TachibanaK.ShiodaT.SatoT.MuramotoE.OnomuraM., “LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges,” in IEEE International Electron Devices Meeting (IEDM) (2013), paper 13.2.1.

[7] O. Kwon, J. Boeckl, M. I. Lee, A. J. Pitera, E. A. Fitzgerald, S. A. Ringel. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrate. J. Appl. Phys., 2005, 97: 034504.

[8] K. Chilukuri, M. J. Mori, C. L. Dohrman, E. A. Fitzgerald. Monolithic COMS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES). Semicond. Sci. Technol., 2007, 22: 29-34.

[9] K. H. Lee, S. Bao, B. Wang, C. Wang, S. F. Yoon, J. Michel, E. A. Fitzgerald, C. S. Tan. Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer. AIP Adv., 2016, 6: 025028.

[10] K. H. Lee, S. Bao, G. Y. Chong, Y. H. Tan, E. A. Fitzgerald, C. S. Tan. Defects reduction of Ge epitaxial film in germanium-on-insulator wafer by annealing in oxygen ambient. APL Mater., 2015, 3: 016102.

[11] C. L. Andre, J. J. Boeckl, D. M. Milt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, S. A. Ringel. Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates. Appl. Phys. Lett., 2004, 84: 3447-3449.

[12] K. H. Lee, Y. H. Tan, A. Jandl, E. A. Fitzgerald, C. S. Tan. Comparative studies of the growth and characterization of germanium epitaxial film on silicon (001) with 0° and 6° offcut. J. Electron. Mater., 2013, 42: 1133-1139.

[13] K. H. Lee, A. Jandl, Y. H. Tan, E. A. Fitzgerald, C. S. Tan. Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber. AIP Adv., 2013, 3: 092123.

[14] D. Kohen, S. Bao, K. H. Lee, K. E. K. Lee, C. S. Tan, S. F. Yoon, E. A. Fitzgerald. The role of AsH₃ partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD—Application to a 200 mm GaAs virtual substrate. J. Cryst. Growth, 2015, 421: 58-65.

[15] M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, E. A. Fitzgerald. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing. Appl. Phys. Lett., 1998, 72: 1718-1720.

[16] J. G. Fiorenza, J.-S. Park, J. Hydrick, J. Li, J. Li, M. Curtin, M. Carroll, A. Lochtefeld. Aspect ratio trapping: a unique technology for integrating Ge and III-Vs with silicon CMOS. ECS Trans., 2010, 33: 963-976.

[17] Y. J. Lee, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee. Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening. IEEE Photon. Technol. Lett., 2005, 17: 2289-2291.

[18] F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford, V. M. Robbins. Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al_xGa_1-_x)_0.5In_0.5P/GaP light-emitting diodes. Appl. Phys. Lett., 1994, 64: 2839-2841.

[19] S. W. Chiou, C. P. Lee, C. K. Huang, C. W. Chen. Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting didoes. J. Appl. Phys., 2000, 87: 2052-2054.

[20] K. Chen, N. Narendran. Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis. Microelectron. Reliab., 2013, 53: 701-705.

[21] SchubertE. F., Light-Emitting Diodes (Cambridge University, 2003).

[22] S. Bao, K. H. Lee, C. Wang, B. Wang, R. I. Made, S. F. Yoon, J. Michel, E. Fitzgerald, C. S. Tan. Germanium-on-insulator virtual substrate for InGaP epitaxy. Mater. Sci. Semicond. Process., 2017, 58: 15-21.

[23] MitsuoF., Reliability and Degradation of Semiconductor Lasers and LEDs (Artech House, 1991).

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator Download： 691次

关于本站 Cookie 的使用提示

全站搜索

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator Download： 691次

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索