高压LED芯片的研究进展
[1] HUANG En-li, WANG Ying-nan, NI Xu-xiang(黄恩立, 王英男, 倪旭翔). Optoelectronics·Laser(光电子·激光), 2010, 21(4): 508.
[2] BAI Sheng-mao, WANG Jing, MIAO Hong-li(白生茂, 王 晶, 苗洪利). Optoelectronics·Laser(光电子·激光), 2010, 21(9): 1298.
[3] CAO Dong-xing, GUO Zhi-you, LIANG Fu-bo, et al(曹东兴, 郭志友, 梁伏波, 等). Acta Physica Sinica(物理学报), 2012, 61(13): 511.
[4] HONG Jian-ming, LI Xiao-yun(洪建明, 李晓云). Research of High Voltage Series Light-Emitting Diode Chip. SSLSS(全国半导体光源系统学术年会), 2011.
[5] Jin-Pin A. J. Phys. Conf. Ser., 2011, 276: 012001.
[7] YAN Chong-guang(颜重光). Electronics Quality(电子质量), 2009, 9: 25.
[8] Guo W L, Yan W W, Zhu Y X, et al. Chinese Physics B, 2012, 21(12): 440.
[9] Chang S J, Chang C S, Su Y K, et al. IEEE Trans. Adv. Packag., 2005, 28(2): 273.
[10] Chitnis A, Sun J, Mandavilli V, et al. Applied Physics Letters, 2002, 81(18): 3491.
[11] Lee C E, Kuo H C, Lee Y C, et al. Shaping Structure, 2008, 20(3): 184.
[12] Chang S J, Chen W S, Shei S C, et al. IEEE Transactions on Advanced Packaging, 2007, 30(4): 752.
[13] Shchekin O B, Epler J E, Trottier T A, et al. Applied Physics Letters, 2006, 89(7): L2112.
[14] ZHANG Teng, ZHANG Yang, LI Jing, et al(詹 腾, 张 扬, 李 璟, 等). Journal of Semiconductors, 2013, 34(9): 094010.
[15] Ding Y. Information Optoelectronics, Nanofabrication and Testing. Optical Society of America, 2012.
[16] Tsai M L, Lai K Y. Applied Physics Express, 2014, 7(2): 343.
[17] Mak G Y, Lam E Y, Choi H W. Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures, 2011, 29(1): 011025.
[18] Lee H K, Yu J S. Semiconductor Science & Technology, 2011, 26(9): 095006.
[19] Horng R H, Shen K C, Kuo Y W, et al. Ecs Solid State Letters, 2012, 1(5): R21.
[20] Zhou S J, Zheng C J, Lv J J, et al. Applied Surface Science, 2016, 366: 299.
[21] So S J, Park C B. Thin Solid Films, 2008, 516(8): 2031.
[22] Tien C H, Chen K Y, Hsu C P, et al. Opt. Express, 2014, 22(Suppl. 6): A1462.
[23] Chiang Y C, Lin B C, Chen K J, et al. Int. J. Photoenergy, 2014, 8: 1.
[24] Takei S, Shinjo T, Sakaida Y, et al. Jpn. J. Appl. Phys., 2007, 46(11): 7273.
[25] Cristina R, Gerard K, Sherif S, et al. The International Society for Optical Engineering, 2001, 4557: 49.
[26] Chen Q, Huang C, Wang Z. Microelectron. Rel., 2012, 52(11): 2670.
[27] Li S, Lam K T, Huang W C, et al. J. Display Technol., 2015, 11(4): 374.
[28] Park S H, Kim Y S, Kim T H, et al. Journal of Nanoscience & Nanotechnology, 2016, 16(2): 1765
[29] Zou X B, Cai Y F, Chong W C, et al. Journal of Display Technology, 2016, 12(4): 397.
[30] WANG Yan-ming, HE Peng, MIAO Zhen-lin, et al(汪延明, 何 鹏, 苗振林, 等). China Illuminating Engineering Journal(照明工程学报), 2017, 28(1): 30.
[31] Chang S J, Chang C Y, Tseng C L, et al. IEEE Photonics Technology Letters, 2014, 26(11): 1073.
[32] Ao J P, Sato H, Mizobuchi T, et al. Physical Status Solid, 2002, 194(2): 376.
[33] Onushkin G A, Lee Y J, Yang J J, et al. IEEE Photonics Technology Letters, 2009, 21(1): 33.
[34] Zhu Y, Xu C, Liang T, et al. Applied Physics Letters, 2006, 89(8): 1506.
[35] Wang H S, Shim J A. IEEE Transactions on Electron Devices, 2008, 55(5): 1123.
[36] Tao Y B, Wang S Y, Chen Z Z, et al. Physica Status Solidi, 2012, 9(3-4): 616.
[37] Cao B, Li S, Hu R, et al. Optics Express, 2013, 21(21): 25381.
[38] Hwu F S, Sung T H, Chen C H, et al. IEEE Photonics Journal, 2013, 5(2): 6600515.
[39] Chiang Y C, Lin B C, Chen K J, et al. International Journal of Photoenergy, 2014, (8): 1.
[40] Hwu F S, Sung T H, Chen C H, et al. IEEE Photonics Journal, 2013, 5(2): 6600515.
[41] Cai Y, Zou X, Chong W C, et al. Physics Status Solidi, 2016, 213(5): 1199.
[42] Grigory A Onushkin, Lee Young-Jin, Yang Jung-Ja, et al. IEEE Photon. Technol. Lett., 2009, 21(1): 33.
[43] Wang C H, Lin D W, Lee C Y, et al. IEEE Electron Device Letters, 2011, 32(8): 1098.
[44] Yen H H, Kuo H C, Yeh W Y. IEEE Photon. Technol. Lett., 2010, 22(15): 1168.
[45] Meneghini M, Tazzoli A, Ranzato E, et al. Reliability Physics Symposium. IEEE Xplore, 2010. 522.
[46] HAN Yu, GUO Wei-ling, FAN Xing, et al(韩 禹, 郭伟玲, 樊 星, 等). Acta Photonica Sinica(光子学报), 2014, 43(8): 43.
[47] Zhang J H, Wu B Q, Shih T M, et al. Applied Physics Letters, 2013, 103(15): 1999.
[48] Tsai M Y, Tang C Y, Yen C Y, et al. IEEE Transactions on Device & Materials Reliability, 2014, 14(1): 161.
[49] Wei T, Qiu X, Lo J C C, et al. Microsystems, Packaging, Assembly and Circuits Technology Conference, IEEE, 2015. 54.
王嘉露, 郭伟玲, 李松宇, 杨新, 孙捷. 高压LED芯片的研究进展[J]. 光谱学与光谱分析, 2018, 38(8): 2325. WANG Jia-lu, GUO Wei-ling, LI Song-yu, YANG Xin, SUN Jie. Research Progress of High-Voltage LED Chip[J]. Spectroscopy and Spectral Analysis, 2018, 38(8): 2325.