Frontiers of Optoelectronics, 2019, 12 (4): 352–364, 网络出版: 2020-01-09
Antimony doped Cs2SnCl6 with bright and stable
Antimony doped Cs2SnCl6 with bright and stable emission
基本信息
DOI: | 10.1007/s12200-019-0907-4 |
中图分类号: | -- |
栏目: | RESEARCH ARTICLE |
项目基金: | This work was financially supported by the NationalNatural Science Foundation of China (Grant Nos. 51761145048, 61725401and 51702107), the National Key R&D Program of China (No.2016YFB0700702) and the China Postdoctoral Science Foundation (No.2018M632843). The authors thank the Analytical and Testing Center ofHUST and the facility support of the Center for Nanoscale Characterizationand Devices, WNLO. The work at Tokyo Institute of Technology wasconducted under the Tokodai Institute for Element Strategy (TIES) funded bythe MEXT Elements Strategy Initiative to Form Core Research Center |
收稿日期: | 2019-02-14 |
修改稿日期: | -- |
网络出版日期: | 2020-01-09 |
通讯作者: | Guangda NIU (guangda_niu@hust.edu.cn) |
备注: | -- |
Jinghui LI, Zhifang TAN, Manchen HU, Chao CHEN, Jiajun LUO, Shunran LI, Liang GAO, Zewen XIAO, Guangda NIU, Jiang TANG. Antimony doped Cs2SnCl6 with bright and stable[J]. Frontiers of Optoelectronics, 2019, 12(4): 352–364. Jinghui LI, Zhifang TAN, Manchen HU, Chao CHEN, Jiajun LUO, Shunran LI, Liang GAO, Zewen XIAO, Guangda NIU, Jiang TANG. Antimony doped Cs2SnCl6 with bright and stable emission[J]. Frontiers of Optoelectronics, 2019, 12(4): 352–364.