发光学报, 2019, 40 (7): 865, 网络出版: 2019-07-31   

Ni插入层对Ag/p-GaN界面接触性能的影响机理

Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance
作者单位
1 南昌大学 国家硅基LED工程技术研究中心, 江西 南昌 330096
2 南昌黄绿照明有限公司, 江西 南昌 330096
引用该论文

徐帅, 王光绪, 吴小明, 郭醒, 刘军林, 江风益. Ni插入层对Ag/p-GaN界面接触性能的影响机理[J]. 发光学报, 2019, 40(7): 865.

XU Shuai, WANG Guang-xu, WU Xiao-ming, GUO Xing, LIU Jun-lin, JIANG Feng-yi. Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance[J]. Chinese Journal of Luminescence, 2019, 40(7): 865.

参考文献

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徐帅, 王光绪, 吴小明, 郭醒, 刘军林, 江风益. Ni插入层对Ag/p-GaN界面接触性能的影响机理[J]. 发光学报, 2019, 40(7): 865. XU Shuai, WANG Guang-xu, WU Xiao-ming, GUO Xing, LIU Jun-lin, JIANG Feng-yi. Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance[J]. Chinese Journal of Luminescence, 2019, 40(7): 865.

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