光电子快报（英文版）, 2019, 15 (2): 113, Published Online: Apr. 16, 2019
Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design
Basic Information
| DOI: | 10.1007/s11801-019-8113-6 |
| 中图分类号: | -- |
| 栏目: | |
| 项目基金: | supported by the National Key Research and Development Program of China (No.2017YFB0403101), and the National Natural Science Foundation of China (No.61474096). |
| 收稿日期: | Jul. 14, 2018 |
| 修改稿日期: | -- |
| 网络出版日期: | Apr. 16, 2019 |
| 通讯作者: | ZENG Xiang-hua (xhzeng@yzu.edu.cn) |
| 备注: | -- |
LIN Hong-liang, ZENG Xiang-hua, SHI Shi-man, TIAN Hai-jun, YANG Mo, CHU Kai-ming, YANG Kai, LI Quan-su. Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design[J]. 光电子快报（英文版）, 2019, 15(2): 113.
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