光电子快报(英文版), 2019, 15 (2): 113, Published Online: Apr. 16, 2019  

Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design

Author Affiliations
1 College of Physics Science and Technology & Institute of Optoelectronic Technology, Yangzhou University, Yang-zhou 225002, China
2 Yangzhou Change Light Optoelectronic Co., Ltd., Yangzhou 225009, China
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LIN Hong-liang, ZENG Xiang-hua, SHI Shi-man, TIAN Hai-jun, YANG Mo, CHU Kai-ming, YANG Kai, LI Quan-su. Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design[J]. 光电子快报(英文版), 2019, 15(2): 113.

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LIN Hong-liang, ZENG Xiang-hua, SHI Shi-man, TIAN Hai-jun, YANG Mo, CHU Kai-ming, YANG Kai, LI Quan-su. Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design[J]. 光电子快报(英文版), 2019, 15(2): 113.

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