1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性
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李再金, 芦鹏, 李特, 曲轶, 薄报学, 刘国军, 马晓辉. 1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性[J]. 发光学报, 2012, 33(6): 647. LI Zai-jin, LU Peng, LI Te, QU Yi, BO Bao-xue, LIU Guo-jun, MA Xiao-hui. Temperature Characteristic of 1.06 μm InGaAs/InGaAsP Quantum Well Laser Diode[J]. Chinese Journal of Luminescence, 2012, 33(6): 647.