Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators

Marco Passoni; Dario Gerace; Liam O’Faolain; Lucio Claudio Andreani

doi:doi:10.1364/PRJ.382620

Photonics Research, 2020, 8 (4): 04000457, Published Online: Mar. 12, 2020

Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators Download： 519次

Marco Passoni ¹Dario Gerace ¹Liam O’Faolain ^2,3Lucio Claudio Andreani ^1,4,*

Author Affiliations

¹ Department of Physics, University of Pavia, 27100 Pavia, Italy

² Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland

³ Tyndall National Institute, Cork, Ireland

⁴ Institute for Photonics and Nanotechnologies (IFN)-CNR, 20133 Milano, Italy

Suppl. Mat.

Marco Passoni, Dario Gerace, Liam O’Faolain, Lucio Claudio Andreani. Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators[J]. Photonics Research, 2020, 8(4): 04000457.

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