[1] Raaeghi M, Rofalski A. Semiconductor ultraviolet detectors[J]. J. Appl. Phys.1996,79(10):7433-7473.

[2] Monroy E, Calle F and Pau J L, et al. Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes[J]. J. Appl. Phys.2000,88(4):2081-2091.

[3] . Studies of tunnel MOS diodesⅠ: Interface effects in silicon Schottky diodes[J]. J. Phys. D, 1971, 3: 1589-1601.

[4] Sze, S M. Semiconductor Devices[C], second ed. New York: John Wiley ＆ Sons;1981.

[5] Rhoderick E H. Metal-Semiconductor Contacts[C]. Oxford: Claredon; 1978.

[6] . Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts[J]. Appl. Phys. Lett., 2006, 89(14): 143505-1.

[7] . Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN/GaN heterostructure determination by means of capacitance-voltege characteristion[J]. J. Appl. Phys., 2006, 100(11): 113712-1.

[8] . Negative capacitance at metal-semiconductor interfaces[J]. J. Appl. Phys., 1990, 68(6): 2845-2848.

[9] . Electronics states at Silicide-Silicon interfaces[J]. Phys. Rev. Lett., 1986, 56(2): 177-180.

[10] . Origion of excess capacitance at intimate schottky contacts[J]. Phys. Rev. Lett., 1988, 60(1): 53-56.

[11] . Anomalous inductive effect in selenium Schottky diodes[J]. Appl. Phys. Lett., 1990, 56(12): 1104-1106.

[12] . Admittance of Al/GaAs Schottky contacts under forward bias as a function of interface preparation conditions[J]. Appl. Phys. Lett., 1991, 58(2): 155-157.

[13] . Extraction of Schottky diodes parameters from forward current-voltege characteristics[J]. Appl. Phys. Lett., 1986, 49(2): 85-87.

[14] . New technique for the determination of series resistance of Schottky barrier diodes[J]. Solid-State Electron, 1992, 35(4): 1023-1024.

[15] . Spaced-charge-limited currents in GaN Schottky diodes[J]. Solid-State Electron, 2005, 49: 847-852.