碲镉汞雪崩焦平面器件

碲镉汞雪崩光电二极管以其高增益、高灵敏度和高速探测的优点成为第 3代红外光电探测器的重要发展方向之一.制备了截止波长 3. 56 μm的雪崩光电二极管焦平面器件,面阵规模为 16×16.焦平面器件在 0~6 V偏压下有效像元率大于 90%,非均匀性小于 20%. 6 V偏压下 NEPh约为 60,过剩噪声因子为 1. 2.

Abstract

HgCdTe APDis one ofthe developingtrends ofthirdgeneration inferredFPAdetectors. In this paper. we report the result on a16×16 arrays ofHgCdTe avalanche photodiode with3.56 μmcut-off wavelength. The operability in gain exceeds 90% and relative gain dispersion is lower than 20%. NEPh is about 60 at 6 V bias with excess noise factor closeto 1.2.

参考文献

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李浩, 林春, 周松敏, 郭慧君, 王溪, 陈洪雷, 魏彦锋, 陈路, 丁瑞军, 何力. 碲镉汞雪崩焦平面器件[J]. 红外与毫米波学报, 2019, 38(5): 587. LI Hao, LIN Chun, ZHOU Song-Min, GUO Hui-Jun, WANG Xi, CHEN Hong-Lei, WEI Yan-Feng, CHEN Lu, DING Rui-Jun, HE Li. HgCdTe avalanche photodiode FPA[J]. Journal of Infrared and Millimeter Waves, 2019, 38(5): 587.

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