High Power Laser Science and Engineering, 2018, 6 (2): 02000e34, Published Online: Jul. 4, 2018 Copy Citation Text  Follow This Article

Figures & Tables

Fig. 1. High power laser diagram.

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Fig. 2. The early integrated waveguide front-end system and pre-amplifier of SG-II (AMP: amplifier).

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Fig. 3. The function of the injection laser system of SG-II.

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Fig. 4. (a) The spectrum of a single frequency output; (b) the broadened spectrum with 3 GHz phase modulation; (c) the broadened spectrum with 22 GHz modulation; (d) the broadened spectrum with modulation.

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Fig. 5. (a) The relationship between the effective length and the actual length of the crystal under different velocity matching conditions (the design frequency is 10.5 GHz, the crystal is lithium niobate). (b) The structure of the resonant cavity modulator based on the cut-off waveguide (A: the injection waveguide; B, D: cutoff waveguide; C: electro-optic crystal).

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Fig. 6. (a) The bulk modulator prototype. (b) curve of 10.302 GHz bulk modulator.

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Fig. 7. (a) The illustration and (b) physical map of the fail-safe system.

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Fig. 8. (a) High-resolution single-shot spectrometer prototype; (b) the calibration results with the wavelength meter.

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Fig. 9. The laser spectrum (bandwidth is 0.52 nm) which was measured using a home-made single-shot spectrometer.

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Fig. 10. The early synchronization scheme of SG-II between the nanosecond shaped laser and the short pulse picosecond laser.

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Fig. 11. Improved optically driven synchronization schematic.

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Fig. 12. Synchronization stability testing results for (a) 4 minutes and (b) 2 hours between the nanosecond laser and the picosecond pulse laser.

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Fig. 13. Homologous clock-lock, phase-locked frequency synchronization scheme.

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Fig. 14. The temporal pulse shaping schematic.

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Fig. 15. The high contrast temporal waveform (600 : 1). (a) Low amplitude pedestal; (b) high amplitude step.

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Fig. 16. (a) Pre-placed injection waveform and (b) AWG closed-loop deviation.

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Fig. 17. (a) The main amplifier output waveform; (b) the actual output and the expected output deviation.

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Fig. 18. (a) The output laser waveform of Nd-doped regenerative amplifier and (b) the output laser waveform of one beam of SG-II at 5000 J, (0.3 nm).

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Fig. 19. The output spectrum with the 3 GHz and 22 GHz phase modulation.

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Fig. 20. (a) The output waveform of the polarization-maintaining front-end system; (b) the output waveform of the single polarization front-end system.

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Fig. 21. Phase modulation-to-amplitude modulation real-time monitoring software interface.

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Fig. 22. FM-to-AM changes of single polarization front-end system (a) for 5 minutes and (b) for 3 hours.

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Fig. 23. (a) Serrated aperture and (b) binary mask aperture.

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Fig. 24. High damage threshold static near-field control element.

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Fig. 25. The experimental results of the uniform intensity distribution (a) after shaped by anti-Gauss beam mask and the parabola distribution after shaped by pre-compensating binary mask of which the peak/center transmission ratio is 5 : 1. (b) The elliptical near-field distribution using binary mask.

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Fig. 26. (a) The distribution of the binary mask. (b) The distribution of the four-pass amplifier without pre-compensation mask. (c) The output near-field distribution of the four-pass amplifier with pre-compensation mask.

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Fig. 27. (a) The near-field distribution of SG-II-upgrade when operated at 8000 J without the second near-field binary shaping mask. (b) The design graphics of the 2nd near-field binary shaping mask. (c) The near-field distribution of SG-II when operated at 17,600 J with the second near-field binary mask.

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Fig. 28. (a) Working principle and (b) the inner structure of the integrated optically addressed spatial modulator.

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Fig. 29. (a) Optical addressing liquid crystal spatial light modulator physical map. (b) Near-field spatial intensity distribution control demonstration.

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Fig. 30. Near-field intensity distribution control strategy (OALAV: optically addressed liquid addressed valve).

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Fig. 31. The scheme of the regenerative amplifier.

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Fig. 32. (a) The regenerative amplifier; (b) the output near-field spot; (c) the energy stability of the regenerative amplifier for one day; (d) the square-pulse distortion of the regenerative amplifier.

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Fig. 33. Off-axis four-pass amplifier optical path diagram.

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Fig. 34. Four-pass amplifier near-field beam spatial distribution. (b) is the one-dimensional distribution of (a).

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Fig. 35. Four-pass pre-amplifier output focal spot distribution. (a) Two-dimensional distribution; (b) surrounding energy distribution.

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Fig. 36. Coaxial four-pass amplifier structure.

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Fig. 37. Near-field intensity distribution (a) without pre-compensation and (b) with pre-compensation.

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Fig. 38. (a) Far-field intensity distribution and (b) surrounding energy distribution.

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Fig. 39. The output energy stability of repetition pre-amplifier.

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Fig. 40. Picosecond joule multi-functional experimental platform.

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Fig. 41. (a) Output energy changes and (b) stability histograms.

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Fig. 42. (a) Injection and output spectra. (b) Pulse width after compression.

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Fig. 43. Parameter to amplify the signal-to-noise ratio measurement after compression.

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Fig. 44. (a) The near-field light spot. (b) The near-field wavefront. (c) Far-field ambient energy.

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Fig. 45. The OPCPA pump source includes: Nd:YAG regenerative amplifier, beam expander, soft-edge iris, spatial filter, three-stage Nd:YAG rod amplifier and frequency multiplier.

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Fig. 46. (a) The output time waveform of the front end and (b) final output of the OPCPA pump source.

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Fig. 47. The energy stability of the OPCPA pump source.

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Fig. 48. The near-field distribution of the OPCPA pump source.

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Table1. The specifications of SG-II.

Specifications SG-II series Contrast  : 1 Precision (PV, 120 ps) Pulse shape control ability Rising edge 100 ps Waveform stability 2% (rms) Duration 0.1–25 ns Near-field distribution control ability Static binary mask Damage threshold (1064 nm@12 ns) Resolution Optical addressed spatial modulator Damage threshold (1064 nm@12 ns) Resolution Energy 12 mJ High-gain regenerative amplifier Stability 1% (rms) Square-pulse distortion 1.5 Spectrum control Bandwidth 0.1–0.3 nm, with fail-safe feedback control Synchronization Precision 20 ps (PV); 3 ps (rms) (2 hours) FM-to-AM control Transmission spectrum ; transmission rate tuning ability tuning ability Repetition doped amplifier Energy and wavefront 1 J (1 Hz),

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Table2. The key parameters of the bulk phase modulators of SG-II and OMEGA.

Parameters SG-II OMEGA [36, 37] Band frequency (GHz) 3.25 10.302 3.3 10.412 Aperture (mm) Modulation spectrum bandwidth (double stage) (double stage) Modulation depth (radV) 0.025 0.072 0.015 0.118

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Wei Fan, Youen Jiang, Jiangfeng Wang, Xiaochao Wang, Dajie Huang, Xinghua Lu, Hui Wei, Guoyang Li, Xue Pan, Zhi Qiao, Chao Wang, He Cheng, Peng Zhang, Wenfa Huang, Zhuli Xiao, Shengjia Zhang, Xuechun Li, Jianqiang Zhu, Zunqi Lin. Progress of the injection laser system of SG-II[J]. High Power Laser Science and Engineering, 2018, 6(2): 02000e34.