脉冲功率应用的IGBT快速驱动电路
[1] 饶俊峰. 基于固态开关的重复频率脉冲功率源的脉冲调制技术及其应用[D]. 上海: 复旦大学, 2013: 3-8. (Rao Junfeng. Pulse modulation technique and its applications of pulse power supply based on the repetition frequency of solid-state switches. Shanghai: Fudan University, 2013: 3-8)
[3] Kluge A, Goehler L, Gueldner H, et al. Design of high-speed IGBT-based switching modules for pulsed power applications[C]//International Power Electronics Conference. 2014: 2554- 2561.
[4] Nguyen M, Cassel R, DeLamare J E, et al. Gate drive for high speed, high power IGBTs[C]//Pulsed Power Plasma Science. 2001, 2: 1039-1042.
[5] Yang Z, Ye S, Liu Y F. A new dual-channel resonant gate drive circuit for low gate driver loss and low switching loss[J]. IEEE Trans Power Electronics, 2008, 23(3): 1574-1583.
[6] 陈静, 周晓青. 基于固体开关器件的“过”驱动技术研究[J]. 现代电子技术, 2012, 35(2): 121-123. (Chen Jing, Zhou Xiaoqing. Research of overdriving technology based on solid switch device. Modern Electronics Technique, 2012, 35(2): 121-123)
[8] Lee Y H, Mielke N R, McMahon W, et al. Thin-gate-oxide breakdown and CPU failure-rate estimation[J]. IEEE Trans Device and Materials Reliability, 2007, 7(1): 74-83.
[9] 廖翠萍. 超薄栅氧化层的TDDB特性与寿命评估[D]. 西安: 西安电子科技大学, 2007: 26-38. (Liao Cuiping. Characteristics and lifetime evaluation of TDDB of ultrathin gate oxide. Xi’an: Xidian University, 2007: 26-38)
[10] 王瑞华. 脉冲变压器设计[M]. 北京: 科学出版社, 1987: 11-12(Wang Ruihua. Design of pulse transformer. Beijing: Science Press, 1987: 11-12)
[11] 刘锡三. 高功率脉冲技术[M]. 北京: 国防工业出版社, 2005: 520-522. (Liu Xisan. High power technology. Beijing: National Defense Industry Press, 2005: 520-522)
朱晓光, 张政权, 刘庆想, 刘猛, 王庆峰. 脉冲功率应用的IGBT快速驱动电路[J]. 强激光与粒子束, 2018, 30(1): 015001. Zhu Xiaoguang, Zhang Zhengquan, Liu Qingxiang, Liu Meng, Wang Qingfeng. High speed IGBT gate driving circuit applied to pulsed power system[J]. High Power Laser and Particle Beams, 2018, 30(1): 015001.