太赫兹科学与电子信息学报, 2018, 16 (1): 1, 网络出版: 2018-07-24   

InP基 RTD太赫兹振荡源及其应用研究进展

Research progress of InP-based resonant tunneling diode terahertz oscillator and its various applications
石向阳 1,2,*苏娟 1,2谭为 1,2张健 1,2
作者单位
1 中国工程物理研究院 a.电子工程研究所,四川绵阳 621999
2 b.微系统与太赫兹研究中心,四川成都 610200
引用该论文

石向阳, 苏娟, 谭为, 张健. InP基 RTD太赫兹振荡源及其应用研究进展[J]. 太赫兹科学与电子信息学报, 2018, 16(1): 1.

SHI Xiangyang, SU Juan, TAN Wei, ZHANG Jian. Research progress of InP-based resonant tunneling diode terahertz oscillator and its various applications[J]. Journal of terahertz science and electronic information technology, 2018, 16(1): 1.

参考文献

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石向阳, 苏娟, 谭为, 张健. InP基 RTD太赫兹振荡源及其应用研究进展[J]. 太赫兹科学与电子信息学报, 2018, 16(1): 1. SHI Xiangyang, SU Juan, TAN Wei, ZHANG Jian. Research progress of InP-based resonant tunneling diode terahertz oscillator and its various applications[J]. Journal of terahertz science and electronic information technology, 2018, 16(1): 1.

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