红外与激光工程, 2016, 45 (12): 1206006, 网络出版: 2017-01-12   

32×32面阵InGaAs Gm-APD激光主动成像实验

Experimental research of 32×32 InGaAs Gm-APD arrays laser active imaging
作者单位
1 哈尔滨工业大学 光电子技术研究所 可调谐(气体)激光技术国防科技重点实验室, 黑龙江 哈尔滨 150001
2 北京机电工程研究所, 北京 100074
3 中国电子科技集团公司第四十四研究所, 重庆 400060
摘要
近十年来, 由于盖革模式APD焦平面探测器在探测灵敏度、空间分辨率和距离分辨率等方面的优势, 使得面阵APD激光主动成像技术成为国际上的研究热点。考虑到大气传输特性, InGaAs材料或者HgCdTe材料的面阵APD探测器成为研制首选。在国内自研InGaAs材料的32×32像元Gm-APD基础上, 搭建了一套1 570 nm激光主动成像实验平台, 在成像帧频1 kHz、单脉冲能量2 mJ条件下, 获得了外场3.9 km目标的轮廓像, 在720 m处能获得目标的清晰表面结构距离像。通过该外场实验, 证实了国内自研的面阵Gm-APD探测器性能良好, 能够演示外场激光主动成像功能。实验结果表明, 1 570 nm面阵APD激光成像雷达成像性能良好, 能够实现远距离目标遥感探测, 为未来实际应用奠定了良好的研究基础。
Abstract
In the last ten years, the laser active imaging technology on Geiger-mode focal plane APD has becoming the research hotspot on the international, because of its advantages on the detection sensitive, spatial resolution, and range resolution. Considering the characteristic of atmospheric transmission, the InGaAs or HgCdTe APD arrays has been selected firstly. Based on the InGaAs 32×32 APD arrays by domestic developing, the experimental platform of 1 570 nm laser active imaging was established. The target images from 3.9 km were captured on the condition of the frame 1 kHz, pulse energy 2 mJ, and the clear target surface structure range images from 720 m were collected. Through this field experiment, it is proved that the performance of Gm-APD arrays is good, and the platform can demonstrate the function of laser active imaging in the field. The experiments state that 1 570 nm focal plane APD laser radar can provide the well imaging performance, and it can remote sensing detection of the far distance target, laying the good research foundation for the future practical applications.
参考文献

[1] Aull B F, Loomis A H, Besse P A, et al. Geiger-mode avalanche photodiodes for three-dimensional imaging[J]. Lincoln Laboratory Journal, 2002, 13(2): 335-350.

[2] Kutteruf M R, Lebow P. 1 541 nm GmAPD LADAR system[C]//SPIE, 2014, 9080: 908006.

[3] 徐璐, 张勇, 张宇, 等. 四Gm-APD探测器提高激光雷达探测性能的研究[J]. 红外与激光工程, 2015, 44(9): 2583-2587.

    Xu Lu, Zhang Yong, Zhang Yu, et al. Four Gm-APD photo counting imaging lidar to improve detection performances[J]. Infrared and Laser Engineering, 2015, 44(9): 2583-2587. (in Chinese)

[4] Rothman J, Foubert K, Lasfargues G. High operating temperature SWIR HgCdTe APDs for remote sensing[C]//SPIE, 2014, 9254: 92540P.

[5] Piccione B, Jiang Xudong, Itzler M A. Spatial modeling of optical crosstalk in InGaAsP Gerger-mode APD focal plane arrays[J]. Optics Express, 2016, 24(10): 10635-10648.

[6] Mark Entwistle, Itzler M A, Chen J, et al. Geiger-mode APD camera system for single photo 3-D LADAR imaging[C]// SPIE, 2012, 8375: 83750D.

[7] 刘俊良, 李永富, 张春芳, 等. 基于APD-PIN结电容平衡电路的门控单光子探测器[J]. 红外与激光工程, 2015, 44(11): 3181-3185.

    Liu Junliang, Li Yongfu, Zhang Chunfang, et al. Single-photo detector based on GPQC with balanced APD-PIN junction capacitance[J]. Infrared and Laser Engineering, 2015, 44(11): 3181-3185. (in Chinese)

[8] Marino R M, Davis W R. Jigsaw: A foliage-penetrating 3D imaging laser radar system[J]. Lincoln Laboratory Journal, 2005, 15(1): 23-36.

[9] Bongki Mheen, Jae-Sik Shim, Ki Soo Kim, et al. Three-dimensional eyesafe laser radar system based on InGaAs/InP 4×4 APD array[C]//2011 3rd International Asia-Pacific Conference on Synthetic Aperture Radar, 2011: 934-936.

[10] Jeff Beck, James McMurdy, Mark Skokan, et al. A highly sensitive multi-element HgCdTe e-APD detector for IPDA lidar applications[C]//SPIE, 2013, 8739: 87390V.

[11] Verghese S, McIntosh K A, Liau Z L, et al. Arrays of 128×32 InP-based Geiger-mode avalanche photodiodes[C]//SPIE, 2009, 7320: 73200M.

[12] Jack M, Chapman G, Edwards J, et al. Advances in LADAR components and subsystems at raytheon[C]//SPIE, 2012, 8353: 83532F.

[13] 郑丽霞, 吴金, 张秀川, 等. InGaAs单光子探测器传感检测与淬灭方式[J]. 物理学报, 2014, 63(10): 104216.

    Zheng Lixia, Wu Jin, Zhang Xiuchuan, et al. Sensing detection and quenching method for InGaAs single-photon detector[J]. Acta Phys Sin, 2014, 63(10): 104216. (in Chinese)

[14] 莫才平, 高新江, 王兵. InGaAs四象限探测器[J]. 半导体光电, 2004, 25(1): 19-21.

    Mo Caiping, Gao Xinjiang, Wang Bing. InGaAs four-quadrant photo-detector[J]. Semiconductor Optoelectronics, 2004, 25(1): 19-21. (in Chinese)

[15] 高新江, 张秀川, 陈扬. InGaAs/InP SAGCM-APD的器件模型及其数值模拟[J]. 半导体光电, 2007, 28(5): 617-622.

    Gao Xinjiang, Zhang Xiuchuan, Chen Yang. Device model and its numerical simulation of InGaAs/InP SAGCM-APD[J]. Semiconductor Optoelectronics, 2007, 28(5): 617-622. (in Chinese)

孙剑峰, 姜鹏, 张秀川, 周鑫, 付宏明, 高新江, 王骐. 32×32面阵InGaAs Gm-APD激光主动成像实验[J]. 红外与激光工程, 2016, 45(12): 1206006. Sun Jianfeng, Jiang Peng, Zhang Xiuchuan, Zhou Xin, Fu Hongming, Gao Xinjiang, Wang Qi. Experimental research of 32×32 InGaAs Gm-APD arrays laser active imaging[J]. Infrared and Laser Engineering, 2016, 45(12): 1206006.

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