微孔阵列铜表面二次电子发射系数抑制研究

针对微孔阵列对铜表面二次电子发射系数(SEY)的抑制效应进行实验研究以提高电真空器件性能。首先利用Casino软件模拟了入射能量分别为0.5 keV和3 keV的电子束垂直入射到方形微孔阵列表面的SEY, 分析了方孔阵列的深宽比和孔隙率对本征二次电子发射系数(ISEY)、背散射二次电子发射系数(BSEY)及总二次电子发射系数(TSEY)的影响。然后采用半导体光刻工艺在铜箔表面制备具有不同形貌参数的圆孔阵列, 采用激光扫描显微镜进行形貌分析和几何结构参数提取, 采用二次电子测试平台进行TSEY测试。仿真结果表明：微孔阵列的深宽比、孔隙率越大, 其SEY抑制特性越明显；随着微孔阵列深宽比逐渐增大, SEY逐渐趋于饱和；入射电子束能量较低时, 微孔阵列对SEY抑制效应比入射能量较高时更为明显。实验结果表明：微孔阵列能有效抑制铜表面SEY, 实测结果与仿真结果规律一致, 为微孔阵列结构用于铜表面SEY抑制提供了依据。

Abstract

It is of great importance to reduce secondary electron yield (SEY) of metals in order to improve performance of electronic vacuum devices. This paper focuses on the experimental study on SEY suppression of copper. First, by using the Casino software, the SEY of square hole array surface was simulated under normal incident primary electron with energy of 0.5, 3 keV respectively. The aspect ratio and porosity dependence of the intrinsic SEY (ISEY), backscattered SEY (BSEY) and total SEY (TSEY) were obtained. Second, by using the photolithography process in semiconductor industry, various circular hole arrays were fabricated on copper foil and their surface morphology were characterized using a laser scanning microscope, their SEY were measured on SEY test platform.Simulation results show that: with increasing aspect ratio and porosity, the SEY suppression effect can be enhanced; when aspect ratio is becoming large enough, the SEY tend to be saturated; the SEY suppression effect is more obvious when incident energy is low. Measurement results show that the micro-hole array surface can effectively suppress the SEY of copper and experimental results agrees qualitatively with simulation results.

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王泽卫, 叶鸣, 陈亮, 贺永宁, 崔万照, 张忠兵. 微孔阵列铜表面二次电子发射系数抑制研究[J]. 强激光与粒子束, 2016, 28(12): 124002. Wang Zewei, Ye Ming, Chen Liang, He Yongning, Cui Wanzhao, Zhang Zhongbing. Study on secondary electron yield suppression of copper by micro-hole array[J]. High Power Laser and Particle Beams, 2016, 28(12): 124002.

微孔阵列铜表面二次电子发射系数抑制研究

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