光学仪器, 2016, 38 (5): 402, 网络出版: 2016-12-23   

飞秒激光参数对硅表面微结构影响的研究

Study of the effects of femtosecond laser peak power to silicon micro-structure
罗坤 1,2,*陈向前 1,2彭滟 1,2朱亦鸣 1,2
作者单位
1 上海理工大学 上海市现代光学系统重点实验室, 上海 200093
2 上海理工大学 光电信息与计算机工程学院, 上海 200093
引用该论文

罗坤, 陈向前, 彭滟, 朱亦鸣. 飞秒激光参数对硅表面微结构影响的研究[J]. 光学仪器, 2016, 38(5): 402.

LUO Kun, CHEN Xiangqian, PENG Yan, ZHU Yiming. Study of the effects of femtosecond laser peak power to silicon micro-structure[J]. Optical Instruments, 2016, 38(5): 402.

参考文献

[1] HER T H,FINLAY R J,WU C,et al.Microstructuring of silicon with femtosecond laser pulses[J].Applied Physics Letters,1998,73(12):1673-1675.

[2] LIU Y,LIU S,WANG Y,et al.Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon[J].Laser Physics,2008,18(10):1148-1152.

[3] CAREY J E,CROUCH C H,MAZUR E.Femtosecond-laser-assisted microstructuring of silicon surfaces[J].Optics and Photonics News,2003,14(2):32-36.

[4] PENG Y,CHEN X Q,ZHOU Y Y,et al.Influence of heat transfer on nodule height of microstructured silicon fabricated by femtosecond laser pulses[J].Applied Physics B,2015,118(2):327-331.

[5] LEE S,YANG D F,NIKUMB S.Femtosecond laser micromilling of Si wafers[J].Applied Surface Science,2008,254(10):2996-3005.

[6] CAHILL D G,YALISOVE S M.Ultrafast lasers in materials research[J].MRS Bulletin,2006,31(8):594-600.

[7] CROUCH C H,CAREY J E,SHEN M,et al.Infrared absorption bysulfur-doped silicon formed by femtosecond laser irradiation[J].Applied Physics A,2004,79(7):1635-1641.

[8] HALBWAX M,SARNET T,DELAPORTE P,et al.Micro and nano-structuration of silicon by femtosecond laser:application to silicon photovoltaic cells fabrication[J].Thin Solid Films,2008,516(20):6791-6795.

[9] SARNET T,HALBWAX M,TORRES R,et al.Femtosecond laser for black silicon and photovoltaic cells[C]//.Proceedings of SPIE 6881,Commercial and Biomedical Applications of Ultrafast Lasers Ⅷ.San Jose,CA:SPIE,2008.

[10] 彭滟,陈向前,朱亦鸣.新型微纳结构硅宽谱高效吸收效率的量化分析[J].光学仪器,2015,37(5):402-406.

[11] GIGURE M,SCHMIDT B E,SHINER A D,et al.Pulse compression of submillijoule few-optical-cycle infrared laser pulses using chirped mirrors[J].Optics Letters,2009,34(12):1894-1896.

[12] PENG Y,WEN Y,ZHANG D S,et al.Optimal proportional relation between laser power and pulse number for the fabrication of surface microstructured silicon[J].Applied Optics,2011,50(24):4765-4768.

[13] 彭滟,温雅,张冬生,等.飞秒激光功率与脉冲数的比例关系对制备硅表面微结构的影响[J].中国激光,2011,38(12):1203005.

[14] GOLDMAN J R,PRYBYLA J A.Ultrafast dynamics of laserexcited electron distributions in silicon[J].Physical Review Letters,1994,72(9):1364-1367.

[15] 赵明,苏卫锋,赵利.表面微构造的硅材料-一种新型的光电功能材料[J].物理,2003,32(7):455-457.

罗坤, 陈向前, 彭滟, 朱亦鸣. 飞秒激光参数对硅表面微结构影响的研究[J]. 光学仪器, 2016, 38(5): 402. LUO Kun, CHEN Xiangqian, PENG Yan, ZHU Yiming. Study of the effects of femtosecond laser peak power to silicon micro-structure[J]. Optical Instruments, 2016, 38(5): 402.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!