Author Affiliations
Abstract
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
A terahertz excitation source based on a dual-lateral-mode distributed Bragg reflector (DBR) laser working in the 1.5 μm range is experimentally demonstrated. By optimizing the width of the ridge waveguide, the fundamental and the first-order lateral modes are obtained from the laser. The mode spacing between the two modes is 9.68 nm, corresponding to a beat signal of 1.21 THz. By tuning the bias currents of the phase and DBR sections, the wavelengths of the two modes can be tuned by 2 nm, with a small strength difference (<5 dB) and a large side-mode suppression ratio (SMSR>45 dB).
140.5960 Semiconductor lasers 250.5960 Semiconductor lasers 
Chinese Optics Letters
2016, 14(1): 011406
Author Affiliations
Abstract
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
2 Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
We experimentally demonstrate all-optical clock recovery for 100 Gb/s return-to-zero on–off keying signals based on a monolithic dual-mode distributed Bragg reflector (DBR) laser, which can realize both mode spacing and wavelength tuning. By using a coherent injection locking scheme, a 100 GHz optical clock can be recovered with a timing jitter of 530 fs, which is derived by an optical sampling oscilloscope from both the phase noise and the power fluctuation. Furthermore, for degraded injection signals with an optical signal-to-noise ratio as low as 4.1 dB and a 25 km long distance transmission, good-quality optical clocks are all successfully recovered.
070.6020 Continuous optical signal processing 140.3520 Lasers, injection-locked 
Chinese Optics Letters
2016, 14(3): 030604
Author Affiliations
Abstract
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100086, China
We report a direct, modulated bandwidth enhancement in a amplified feedback laser (AFL), both experimentally and numerically. By means of fabricated devices, an enhanced 3 dB bandwidth of 27 GHz with an in-band flatness of ±3 dB is experimentally confirmed at 13 °C. It is numerically confirmed that the modulated bandwidth of the AFL can be enhanced to two times its original bandwidth, with more controlled flexibility to realize a flat, small-signal response.
140.5960 Semiconductor lasers 130.3120 Integrated optics devices 060.4510 Optical communications 
Chinese Optics Letters
2015, 13(5): 051401
作者单位
摘要
中国科学院半导体研究所材料重点实验室,北京 100086
提出了一种基于单片集成放大反馈激光器在光反馈的条件下产生窄线宽激光和窄线宽微波信号的方法。在不同的注入电流下,放大反馈激光器可以实现稳定的单模和双模激射。单模激射下,器件的激射波长为1546.6 nm,边摸抑制比可达54.2 dB,线宽为9.59 MHz。 双模激射下,模式间距为0.3 nm, 对应拍频频率为37.6 GHz,拍频线宽为4.2 MHz。通过引入一个双环光纤外腔,可以将放大反馈激光器输出的光信号反馈回激光器,提高整个复合腔的光子寿命,从而压缩光信号的线宽。在合适的反馈强度下,单模工作时光信号的线宽从9.95 MHz减小到 2.6 kHz。双模工作时拍频信号的线宽从4.2 MHz减小到 1.6 kHz,均减小三个数量级以上。
激光器 微波 分布反馈激光器 注入锁定激光器 集成光学器件 
光学学报
2015, 35(s2): s214010
作者单位
摘要
中国科学院半导体研究所材料重点实验室,北京 100083
针对少模光通信需求,仿真设计并制作了一种基于压应变量子阱结构的少模激光器。通过调整工作电流,该器件可以实现基模和一阶模工作。利用该器件成功激发了少模光纤的LP01模和LP11模。这种器件制作方法简单、成本低、易于集成,可作为少模通信系统的光源,为空分复用系统中发射端的集成化提供了可能。
光通信 半导体激光器 模式 光学器件 
光学学报
2015, 35(s2): s206001
作者单位
摘要
中国科学院半导体研究所 材料重点实验室,北京 100086
报道并制备一种脊波导结构的大功率1.5 μm分布反馈(DFB)激光器。为了获取最大的激光器出光功率,采用上下限制层非对称的波导结构。通过模拟仿真发现,当下限制层选择为450 nm时,该激光器具有最小的内部损耗系数,同时还能保证一阶模(m=1)在量子阱区具有最小的限制因子。实际制备的管芯的损耗系数为9.78 cm-1,这与仿真中计算的损耗系数9.3 cm-1较为符合。600 mA直流电流下,制备的法布里-帕罗(F-P)腔激光器最大功率大于114 mW;255 mA直流电流下,制备的单波长DFB激光器具有45 dB的边模抑制比,40 mW输出功率,和小于400 kHz的光谱线宽。
激光器 分布反馈激光器 高功率 非对称波导盖层 
中国激光
2015, 42(s1): s102012
作者单位
摘要
1 中国科学院半导体研究所材料重点实验室, 北京 100086
2 中国科学院福建物质结构研究所, 福建 350002
采用多量子阱掩埋条形(BRS)增益芯片和拉锥光纤布拉格光栅(FBG),制作了1.5 μm 波段FBG 外腔式窄线宽半导体激光器。封装后器件实现了全电流范围内稳定单模窄线宽激光输出。30~250 mA 驱动电流下线宽小于15.48 kHz,实测最小线宽为6.42 kHz,频率稳定度为7.2×10-8/s,边模抑制比大于40 dB,最大出纤功率大于10 mW。这种集成窄线宽激光器性能优异,且制作成本低,工艺简单,适于批量生产,可应用于400 Gb/s相干通信系统的发射源与接收机本振源。
激光器 半导体激光器 相干通信 集成光学器件 光纤布拉格光栅 
中国激光
2015, 42(5): 0502007

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