1 云南省光电信息技术重点实验室, 云南 昆明 650500
2 云南师范大学 物理与电子信息学院, 云南 昆明 650500
采用分子束外延技术(MBE)在GaAs衬底上外延生长高In组分(>40%)InGaNAs/GaAs量子阱材料, 工作波长覆盖1.3~1.55 μm光纤通信波段。利用室温光致发光(PL)光谱研究了N原子并入的生长机制和InGaNAs/GaAs量子阱的生长特性。结果表明: N组分增加会引入大量非辐射复合中心; 随着生长温度从480 ℃升高到580 ℃, N摩尔分数从2%迅速下降到0.2%; N并入组分几乎不受In组分和As压的影响, 黏附系数接近1; 生长温度在410 ℃、Ⅴ/Ⅲ束流比在25左右时, In0.4Ga0.6N0.01As0.99/GaAs量子阱PL发光强度最大, 缺陷和位错最少; 高生长速率可以获得较短的表面迁移长度和较好的晶体质量。
量子阱 分子束外延 光致发光光谱 InGaNAs InGaNAs quantum well molecular beam epitaxy photoluminescence
Author Affiliations
Abstract
1 Department of Physics, Shanghai University, Shanghai 200444
2 State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119
We investigate the lateral shift of a TM-polarized light beam reflected from Otto configuration under grazing incidence. It is found that the lateral shift is strongly dependent on the thickness of the air-gap layer. By employing the pole-null representation, we demonstrate that the lateral shift is closely related to the null of the reflection function. The numerical simulations for a Gaussian beam are performed to demonstrate the validity of our theoretical analysis.
Goos-H?nchen位移 掠入射 极点-零点描述 120.5700 Reflection 240.0240 Optics at surfaces 260.2110 Electromagnetic optics Chinese Optics Letters
2008, 6(6): 446
