Author Affiliations
Abstract
1 Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
2 Sino-German College for Intelligent Manufacturing, Shenzhen Technology University, Shenzhen 518060, China
3 Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
4 Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
Supercontinuum generation (SC) of more than one octave spectrum spanning covering from 400 nm to 820 nm was achieved by pumping a piece of aluminum nitride (AIN) single crystal using a nanosecond 355 nm ultraviolet laser. The AlN with a thickness of 0.8 mm was grown by an optimized physical vapor transport technique and polished with solidification technology. Compared to previously reported ones, the achieved visible SC exhibited the broadest spectrum spanning from bulk materials pumped by a nanosecond pulse laser. The visible supercontinuum in AlN presents new opportunities for bulk material-based white light SC and may find more potential applications beyond typical applications in integrated semiconductive photoelectronic devices.
320.6629 Supercontinuum generation 190.2640 Stimulated scattering, modulation,etc. 190.4720 Optical nonlinearities of condensed matter 
Chinese Optics Letters
2018, 16(4): 043201
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 College of Information Technology, Jilin Agricultural University, Changchun 130118, China
4 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
The depth profile of electric-field-induced (EFI) optical rectification (OR) and EFI Pockels effect (PE) in a Si(110) crystal are investigated. The results show that EFI OR and PE signals are very sensitive to the electric field strength in the surface layers of the Si crystal. Theoretical formulas that include the electric field parameters and the widths of the space-charge region are presented and agreed very well with the experimental results. The experiments and simulations indicate that EFI OR and PE are potential methods for researching the surface/interface properties along the depth direction in centrosymmetric crystals such as Si.
240.4350 Nonlinear optics at surfaces 190.4350 Nonlinear optics at surfaces 190.4720 Optical nonlinearities of condensed matter 
Chinese Optics Letters
2017, 15(6): 062401
Author Affiliations
Abstract
1 National Laboratory of Solid State Microstructures, School of Physics, and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
2 State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China
3 Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
We experimentally investigate the resonant and nonresonant second-harmonic generation in a single cadmium sulfide (CdS) nanowire. The second-order susceptibility tensor is determined by analyzing the forward second-harmonic signals of the CdS nanowire. Our results show that (1) d33/d31= 2.5 at a nonresonant input wavelength of 1050 nm; (2) d33/d31= 1.9 at a resonant wavelength of 740 nm. The difference can be attributed to the polarization-dependent resonance.
190.2620 Harmonic generation and mixing 190.4720 Optical nonlinearities of condensed matter 
Chinese Optics Letters
2017, 15(6): 061901
Author Affiliations
Abstract
1 Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran
2 Department of Physics, College of Sciences, Shiraz University, Shiraz 71946-84795, Iran
3 Department of Physics, Shiraz University of Technology, Shiraz 71555-313, Iran
The electron and heavy hole energy levels of two vertically coupled InAs hemispherical quantum dots/wetting layers embedded in a GaAs barrier are calculated numerically. As the radius increases, the electronic energies increase for the small base radii and decrease for the larger ones. The energies decrease as the dot height increases. The intersubband and interband transitions of the system are also studied. For both, a spectral peak position shift to lower energies is seen due to the vertical coupling of dots. The interband transition energy decreases as the dot size increases, decreases for the dot shapes with larger heights, and reaches a minimum for coupled semisphere dots.
190.4720 Optical nonlinearities of condensed matter 160.4760 Optical properties 
Chinese Optics Letters
2016, 14(12): 121904
Author Affiliations
Abstract
Intersubband linear and third-order nonlinear optical properties of conical quantum dots with infinite barrier potential are studied. The electronic structure of conical quantum dots through effective mass approximation is determined analytically. Linear, nonlinear, and total absorption coefficients, as well as the refractive indices of GaAs conical dots, are calculated. The effects of the size of the dots and of the incident electromagnetic field are investigated. Results show that the total absorption coefficient and the refractive index of the dots largely depend on the size of the dots and on the intensity and polarization of the incident electromagnetic field.
190.4720 Optical nonlinearities of condensed matter 160.4760 Optical properties 
Chinese Optics Letters
2012, 10(12): 121901
Author Affiliations
Abstract
The transverse electro-optic (EO) modulation system is built based on cubic boron nitride (cBN) single crystals unintentionally doped and synthesized at a high pressure and high temperature. The photoelectric output of the system includes two parts that can be measured respectively and the value of elements in the linear EO tensor of the cBN crystal can be obtained. This method does not need to measure the absolute light intensity. All of the surfaces of the tiny cBN crystals whose hardness is next to the hardest diamonds are {111} planes. The rectangular parallelepiped cBN samples are obtained by cleaving along {110} planes and subsequently grinding and polishing f112g planes of the tiny octahedral cBN flakes. Three identical non-zero elements of the EO tensor of the cBN crystal are measured via two sample configurations, and the measured results are very close, about 3.68 and 3.95 pm/V, respectively, which are larger than the linear EO coefficients of the general III-V compounds.
160.2100 Electro-optical materials 160.4760 Optical properties 190.4400 Nonlinear optics, materials 190.4720 Optical nonlinearities of condensed matter 
Chinese Optics Letters
2012, 10(4): 041602
Author Affiliations
Abstract
Mesoporous silica thin films loaded with gold nanoparticles are synthesized in the presence of EO20PO70EO20 (P123). Transmission electron microscope images show that the matrix of the nanocomposite is an ordered porous structure with a two-dimensional hexagonal phase. The wide-angle X-ray diffraction pattern implies that the nanocomposite contains gold crystals. These metallic nanoparticle-embedded solid thin films show some linear and nonlinear optical properties due to their special structure and composition. Gold nanoparticles bring about surface plasmon resonance, and an absorption peak stemming from this effect has been observed. The linear absorption property is analyzed by a quantum mechanism, and the results show that it is in°uenced by the size and volume fraction of gold nanoparticles. Furthermore, it shows an obviously clear nonlinear optical property measured by the z -scan technique. The magnitude of the nonlinear refractive index of the nanocomposite is estimated to be about 10^{-10} cm2/W.
160.4330 Nonlinear optical materials 190.4720 Optical nonlinearities of condensed matter 240.6680 Surface plasmons 310.6860 Thin films, optical properties 
Chinese Optics Letters
2012, 10(3): 031601
Author Affiliations
Abstract
Nonlinear processes associated with terahertz radiation generated via optical rectification from undoped GaP crystal, including second harmonic generation (SHG) and multiphoton absorption processes, are examined. Experimental results of polarization-resolved SHG are obtained.
190.7110 Ultrafast nonlinear optics 190.4720 Optical nonlinearities of condensed matter 320.7130 Ultrafast processes in condensed matter, including semiconductors 
Chinese Optics Letters
2011, 9(s1): s10201
Author Affiliations
Abstract
1 Instituto de Física Teórica, Universidade Estadual Paulista, Sāo Paulo 01.405-900, Sāo Paulo, Brazil
2 Department of Physics, Hubei Normal University, Huangshi 435002, China
The evolution characteristics of a matter-wave bright soliton are investigated by means of the variational approach in the presence of spatially varying nonlinearity. It is found that the atom density envelope of the soliton is changed as a result of the spatial variation of the s-wave scattering length. The stable soliton can exist in appropriate initial conditions. The movement of the soliton depends on the sign and value of the coefficient of spatially modulated nonlinearity. These theoretical predictions are confirmed by the full numerical simulations of the one-dimensional Gross-Pitaevskii equation.
玻色-爱因斯坦凝聚 孤子 空间调制非线性 等效电势 190.4720 Optical nonlinearities of condensed matter 270.5530 Pulse propagation and temporal solitons 140.7010 Laser trapping 
Chinese Optics Letters
2009, 7(9): 834
Author Affiliations
Abstract
Institut für Festkorperphysik, Technische Universitat Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany2 Innolume GmbH, Konrad-Adenauer-Allee 11, 40263 Dortmund, Germany3 Electrical Engineering Department, Technion, Haifa 32000, Israel
The dynamics of nonlinear processes in quantum dot (QD) semiconductor optical amplifiers (SOAs) are investigated. Using small-signal measurements, the suitabilities of cross-gain and cross-phase modulation as well as four wave mixing (FWM) for wavelength conversion are examined. The cross-gain modulation is found to be suitable for wavelength conversion up to a frequency of 40 GHz.
半导体光放大器 量子点 非线性 250.5980 Semiconductor optical amplifiers 250.5590 Quantum-well, -wire and -dot devices 190.4720 Optical nonlinearities of condensed matter 
Chinese Optics Letters
2008, 6(10): 724

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