提出融合变分模态分解（VMD）和自编码器的预测方法，将温升特性曲线分解成若干个子信号分量，其中包含高频的波动量、中间量和低频的趋势量，然后利用自编码器对每个分量进行预测，最后将分量的预测值相加，从而实现对PIN二极管温升特性曲线的精准预测。通过与多种机器学习方法的对比验证了结合VMD分解可有效提升预测精度，同时也验证了自编码器在特性曲线拟合上的优势。

The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension (JTE) structures for power devices. However, achieving a gradual doping concentration change in the lateral direction is difficult for SiC devices since the diffusion constants of the implanted aluminum ions in SiC are much less than silicon. Many previously reported studies adopted many new structures to solve this problem. Additionally, the JTE structure is strongly sensitive to the ion implantation dose. Thus, GA-JTE, double-zone etched JTE structures, and SM-JTE with modulation spacing were reported to overcome the above shortcomings of the JTE structure and effectively increase the breakdown voltage. They provided a theoretical basis for fabricating terminal structures of 4H-SiC PiN diodes. This paper summarized the effects of different terminal structures on the electrical properties of SiC devices at home and abroad. Presently, the continuous development and breakthrough of terminal technology have significantly improved the breakdown voltage and terminal efficiency of 4H-SiC PiN power diodes.

硅像素传感器上的保护环结构有利于提高传感器的耐高电压性能，为评估保护环结构对硅像素传感器的保护效果，仿真分析了三种保护环结构。通过计算机辅助设计 技术对三种保护环结构进行二维建模，利用TACD内置的电学模型对三种保护环结构的I-V特性进行了仿真。研究结果表明，电流收集环会提高像素的耐高电压性能，同时不等间距保护环、保护环的内外等距离Al悬挂以及多个保护环结构有利于进一步提高传感器的击穿电压。