随着我国科技水平的飞速发展，激光惯性导航系统的精度要求越来越高。采用工业级原材料，通过固相合成法制备了铌锑-铌镍-锆钛酸铅(PSN-PNN-PZT)四元系大应变压电陶瓷材料，讨论了不同含量Sr对PSN-PNN-PZT压电陶瓷材料介电性能、压电性能的影响。结果表明：当Sr含量为1%(摩尔分数)、n(Zr)/n(Ti)=43/57(摩尔比)时，PSN-PNN-PZT组成位于准同型相界附近，压电陶瓷性能较优，获得了一种相对介电常数εT33/ε0、机电耦合系数kp、压电常数d33、介电损耗tan δ、居里温度Tc分别为4 090、0.664、686 pC/N、0.016 5及213 ℃的大应变压电陶瓷材料；基于该材料配方制备的24 mm×5 mm×0.4 mm压电陶瓷圆环，在100 V的驱动电压下产生的应变量能达到2.500 5 μm，较现有的PZT-14(P14)材料提升32.4%，能应用于高精度激光陀螺稳频器中，提高压电陶瓷微位移驱动器的可靠性。

采用常规固相反应法合成了Pb1-xSrx(Mn1/3Sb2/3)0.05Zr0.48Ti0.47O3+0.25%CeO2+0.50%Yb2O3+0.15%Fe2O3 (PMS-PZT, x=0, 0.02, 0.04, 0.06)的三元系硬性压电陶瓷。采用X线衍射仪、准静态压电常数测试仪和铁电测试仪系统地研究了Sr取代对PMS-PZT陶瓷的相结构及电学性能的影响。实验结果表明, 无Sr取代和有Sr取代的PMS-PZT压电陶瓷均具有单一的四方相晶体结构。当x=0.02时, PMS-PZT的性能最佳: d33=415 pC/N,Qm=522,TC=291 ℃,kp=0.64,εr=1 304,Pr=11.32 μC/cm2,Ec=9.05 kV/cm。

Solid solution samples of the three-component system (1 − x)Pb(Ti0.5Zr0.5)O3−xCdNb₂O₆ with x = 0.0125–0.0500, Δx = 0.0125 were obtained by solid phase synthesis followed by sintering using conventional ceramic technology. The crystal structure, microstructure, electrophysical, and thermophysical properties of these ceramics have been studied. It is shown that all studied solid solutions can be divided into two groups (with x = 0.0125 and with x> 0.0125), characterized by different characteristics of the change in properties with variations in external influences. This is probably due to the transition from a perovskite-type structure with a tetragonal (T) unit cell to inhomogeneous solid solutions consisting of a series of T-phases with similar cell parameters. A conclusion is made about the expediency of using the data obtained in the development of similar materials for devices based on them.Solid solution samples of the three-component system (1 − x)Pb(Ti0.5Zr0.5)O3−xCdNb₂O₆ with x = 0.0125–0.0500, Δx = 0.0125 were obtained by solid phase synthesis followed by sintering using conventional ceramic technology. The crystal structure, microstructure, electrophysical, and thermophysical properties of these ceramics have been studied. It is shown that all studied solid solutions can be divided into two groups (with x = 0.0125 and with x> 0.0125), characterized by different characteristics of the change in properties with variations in external influences. This is probably due to the transition from a perovskite-type structure with a tetragonal (T) unit cell to inhomogeneous solid solutions consisting of a series of T-phases with similar cell parameters. A conclusion is made about the expediency of using the data obtained in the development of similar materials for devices based on them.

Pb(Zr1-xTix)O3 (PZT)由于具有优异的综合性能而成为应用最广泛的压电陶瓷。之前研究工作证明了与直流极化(DCP)和交流极化(ACP)相比, 采用交流极化和直流极化相结合的方法能进一步提高弛豫铁电单晶材料的压电性能。本工作报道了直流极化、交流极化和交流极化+直流极化后PZT-4压电陶瓷的介电性能和压电性能, 探究了直流极化、交流极化和交流极化+直流极化的最佳极化条件。在最佳交流极化+直流极化条件下, PZT-4 压电陶瓷的压电常数(d33)为350 pC/N, 相比直流极化(305 pC/N)、交流极化(320 pC/N)分别提高了15%和9%。交流极化后的PZT-4陶瓷样品的应变值(0.08%)高于进行直流极化样品的(应变值0.05%), 表明交流极化可以有效提高PZT-4陶瓷的应变值, 但是交流极化后应变曲线的滞后增大不利于器件应用, 交流极化对硬性压电陶瓷的影响还需要进一步探讨。

The theoretical possibility of the temperature-activation process of the temperature dependence of the dielectric constant of samples of ferroelectric ceramics lead zirconate titanate (PZT) at temperatures below the Curie point is considered. The model takes into account the 180° motion of the domain wall, which is located in the potential well. The values of activation energies (∼ 0.01, 0.1, 1 eV) were obtained from the experimental dependences of the logarithm of the dielectric constant on the reciprocal temperature. This is associated with three processes: initial vibrations of domain walls; separation of domain walls (DWs) from oxygen vacancies; the motion of DWs as a result of the motion of oxygen vacancies.The theoretical possibility of the temperature-activation process of the temperature dependence of the dielectric constant of samples of ferroelectric ceramics lead zirconate titanate (PZT) at temperatures below the Curie point is considered. The model takes into account the 180° motion of the domain wall, which is located in the potential well. The values of activation energies (∼ 0.01, 0.1, 1 eV) were obtained from the experimental dependences of the logarithm of the dielectric constant on the reciprocal temperature. This is associated with three processes: initial vibrations of domain walls; separation of domain walls (DWs) from oxygen vacancies; the motion of DWs as a result of the motion of oxygen vacancies.

Pb0.96Sr0.04(Zr,Ti)0.7(Zn1/3Nb2/3)0.3O₃ (PZN–PZT) piezoceramics with various Zr/Ti ratios and Li₂CO₃ sintering aid were sintered at 900^∘C by the solid-state reaction route. The samples with different Zr/Ti ratios were compared according to microstructure, phase structure, piezoelectricity, ferroelectricity, and dielectric relaxation. The Zr/Ti ratio in the PZN–PZT ceramics greatly affects the electrical properties. The Zr/Ti ratio affects the proportion between the rhombohedral and tetragonal phases and also affects the grain size. The PZN–PZT ceramics with the Zr/Ti ratio of 53:47 have the largest grain size and have optimized piezoelectric properties (kp = 0.58, d33 = 540 pC/N, and TC = 250^∘C). The larger the grain size, the lesser the grain boundary, the easier the domain wall motion, and the better the piezoelectric properties. The PZT ceramic with Zr/Ti ratio of 53:47 locates the morphotropic phase boundary (MPB) region which is one of the key factors for the high piezoelectric properties of the PZT.Pb0.96Sr0.04(Zr,Ti)0.7(Zn1/3Nb2/3)0.3O₃ (PZN–PZT) piezoceramics with various Zr/Ti ratios and Li₂CO₃ sintering aid were sintered at 900^∘C by the solid-state reaction route. The samples with different Zr/Ti ratios were compared according to microstructure, phase structure, piezoelectricity, ferroelectricity, and dielectric relaxation. The Zr/Ti ratio in the PZN–PZT ceramics greatly affects the electrical properties. The Zr/Ti ratio affects the proportion between the rhombohedral and tetragonal phases and also affects the grain size. The PZN–PZT ceramics with the Zr/Ti ratio of 53:47 have the largest grain size and have optimized piezoelectric properties (kp = 0.58, d33 = 540 pC/N, and TC = 250^∘C). The larger the grain size, the lesser the grain boundary, the easier the domain wall motion, and the better the piezoelectric properties. The PZT ceramic with Zr/Ti ratio of 53:47 locates the morphotropic phase boundary (MPB) region which is one of the key factors for the high piezoelectric properties of the PZT.

目前压电阻抗法应用中,锆钛酸铅压电陶瓷(PZT)片尺寸及粘贴位置选择的研究尚不充分。该文通过设计对比实验, 研究了PZT尺寸与粘贴位置对传感器导纳的影响机理。结果表明, 包含被测结构信息的局部密集峰主要分布在谐振频段; PZT尺寸越大, 谐振频段的局部密集峰越强。压电阻抗法中,PZT尺寸应结合检测频段包含谐振频段的原则来选择, PZT的粘贴位置将影响导纳曲线上的局部密集峰分布。研究结果为压电阻抗法应用中PZT的尺寸与粘贴位置选择提供了参考依据。

为提高柔性可穿戴传感器的电信号输出能力, 设计并制备了以聚二甲基硅氧烷(PDMS)为基体, 锆钛酸铅(PZT)为压电相的0-3型压电复合材料。探究了不同固相含量对浆料流变性能的影响。结果表明, 浆料的粘度与剪切模量随银修饰PZT质量分数(w(PZT))的增加而增加, w(PZT)=38%时浆料屈服点为398.1 Pa, 具有最优的可打印性。在电信号测试中, 经银修饰样品最大电压峰-峰可达20.54 V, 约为未经银修饰样品最大电压峰-峰值的5倍。弯曲测试中, 在长度之差ΔL=7 cm时, 样品电压峰-峰值为55 mV, 证明样品具备柔性传感性能。

以Pb(Ni1/3Nb2/3)O3-Pb(Zr0.41Ti0.59)O3(PNN-PZT)为基础体系, 通过对烧结助剂x%CuO(质量比)和y%LiBiO2(质量比)的质量进行调节, 对陶瓷样品的相结构、微观组织形貌及电学性能进行了分析, 阐述了助烧剂对陶瓷样品性能的影响。结果发现, 在温度940~960 ℃下陶瓷烧结成瓷, 且晶粒长大较充分。当x =0.2, y =1时, 陶瓷样品的电学性能最优, 即此时压电常数d33 =608 pC/N, 机电耦合系数kp=0.65, 介电损耗tan δ =2.19%, 介电常数εr=3 843。采用烧结助剂质量比x=0.2,y=1的粉体制备7 mm×7 mm×36 mm的叠层压电驱动器, 然后进行微观组织形貌和位移特性研究。叠层压电驱动器断面微观结构表明, 电极层与陶瓷层粘接紧密, 无裂缝或间隙产生。位移的测试结果表明, 随着电压的增加, 位移也在逐渐增加, 在驱动电压为150 V时, 其最大位移为46.280 μm, 位移增大的同时, 迟滞逐渐降低。