High-resolution multi-color printing relies upon pixelated optical nanostructures, which is crucial to promote color display by producing nonbleaching colors, yet requires simplicity in fabrication and dynamic switching. Antimony trisulfide (Sb₂S₃) is a newly rising chalcogenide material that possesses prompt and significant transition of its optical characteristics in the visible region between amorphous and crystalline phases, which holds the key to color-varying devices. Herein, we proposed a dynamically switchable color printing method using Sb₂S₃-based stepwise pixelated Fabry-Pérot (FP) cavities with various cavity lengths. The device was fabricated by employing a direct laser patterning that is a less time-consuming, more approachable, and low-cost technique. As switching the state of Sb₂S₃ between amorphous and crystalline, the multi-color of stepwise pixelated FP cavities can be actively changed. The color variation is due to the profound change in the refractive index of Sb₂S₃ over the visible spectrum during its phase transition. Moreover, we directly fabricated sub-50 nm nano-grating on ultrathin Sb₂S₃ laminate via microsphere 800-nm femtosecond laser irradiation in far field. The minimum feature size can be further decreased down to ~45 nm (λ/17) by varying the thickness of Sb₂S₃ film. Ultrafast switchable Sb₂S₃ photonic devices can take one step toward the next generation of inkless erasable papers or displays and enable information encryption, camouflaging surfaces, anticounterfeiting, etc. Importantly, our work explores the prospects of rapid and rewritable fabrication of periodic structures with nano-scale resolution and can serve as a guideline for further development of chalcogenide-based photonics components.

由于硫系玻璃具有良好的光学性质，在非线性光学等方面研究广泛，但基于硫系玻璃光电探测器的相关研究却很少。本文利用真空共热蒸发技术制备了不同掺银比例的硫系玻璃薄膜作为半导体膜层结构，并设计构建了金属-绝缘体-半导体结构的自供电光电探测器，探究了该光电探测器的响应光谱范围。结果表明，该探测器对可见光到近红外区域的光均有响应。针对掺银硫系玻璃光电探测器在635 nm波长激光下，研究了探测器响应电压与激发功率之间的关系。当激光功率小于10 mW时，探测器响应电压与激发功率线性相关；当激光功率大于10 mW时，探测器响应电压逐渐饱和。探测器的上升和衰减时间分别为3.932 s和1.522 s。本研究为硫系玻璃材料在自供电光电探测器领域的应用提供了证明。

Curvature sensing plays an important role in structural health monitoring, damage detection, real-time shape control, modification, etc. Developing curvature sensors with large measurement ranges, high sensitivity, and linearity remains a major challenge. In this study, a curvature sensor based on flexible one-dimensional photonic crystal (1D-PC) films was proposed. The flexible 1D-PC films composed of dense chalcogenide glass and water-soluble polymer materials were fabricated by solution processing. The flexible 1D-PC film curvature sensor has a wide measurement range of 33–133 m^-1 and a maximum sensitivity of 0.26 nm/m^-1. The shift of the transmission peak varies approximately linearly with the curvature in the entire measurement range. This kind of 1D-PC film curvature sensor provides a new idea for curvature sensing and measurement.

实验研究发现AZ5214光刻胶在一定曝光剂量下显影后会留存一定厚度的底膜，该底膜可以在干法刻蚀过程中避免As-S薄膜与碱性显影液直接接触，减轻薄膜表面损伤，起到保护作用。基于此，采用该底膜作为保护层制备As₂S₃脊型波导，研究结果表明，在AZ5214光刻胶匀胶厚度为2.1 μm、紫外曝光剂量为200 mJ/cm²、显影时间为45 s的条件下会留存约为220 nm厚的光致保护层，该条件下保护层均匀性较好，且在刻蚀阶段可以完全去除。实验表明利用此保护层制备的As₂S₃脊型波导具有良好的形貌特征，波导脊宽约为3 μm、脊高约为800 nm的As₂S₃脊型波导的传输损耗约为0.74 dB/cm@1 550 nm。