High-resolution multi-color printing relies upon pixelated optical nanostructures, which is crucial to promote color display by producing nonbleaching colors, yet requires simplicity in fabrication and dynamic switching. Antimony trisulfide (Sb₂S₃) is a newly rising chalcogenide material that possesses prompt and significant transition of its optical characteristics in the visible region between amorphous and crystalline phases, which holds the key to color-varying devices. Herein, we proposed a dynamically switchable color printing method using Sb₂S₃-based stepwise pixelated Fabry-Pérot (FP) cavities with various cavity lengths. The device was fabricated by employing a direct laser patterning that is a less time-consuming, more approachable, and low-cost technique. As switching the state of Sb₂S₃ between amorphous and crystalline, the multi-color of stepwise pixelated FP cavities can be actively changed. The color variation is due to the profound change in the refractive index of Sb₂S₃ over the visible spectrum during its phase transition. Moreover, we directly fabricated sub-50 nm nano-grating on ultrathin Sb₂S₃ laminate via microsphere 800-nm femtosecond laser irradiation in far field. The minimum feature size can be further decreased down to ~45 nm (λ/17) by varying the thickness of Sb₂S₃ film. Ultrafast switchable Sb₂S₃ photonic devices can take one step toward the next generation of inkless erasable papers or displays and enable information encryption, camouflaging surfaces, anticounterfeiting, etc. Importantly, our work explores the prospects of rapid and rewritable fabrication of periodic structures with nano-scale resolution and can serve as a guideline for further development of chalcogenide-based photonics components.

量子点作为一种理想的发光材料，一直以来引起了科学家和工业界的广泛关注，推动了生物成像、照明、显示等领域的发展。随着生态环境保护的意识逐渐增强，磷化铟量子点（InP QDs）作为镉基量子点的最好替代者之一，受到了广泛的关注：一方面，InP QDs具有与镉基量子点相媲美的发光和光电性质；另一方面，其发光光谱范围可覆盖整个可见光区，且合成工艺与镉基量子点共通。然而，因为InP QDs与传统镉基量子点相比，在元素价态、核壳晶格匹配性、反应动力学过程等方面具有特殊性，其合成化学的发展还不成熟，限制了其光电应用的研究进程。本文结合量子点显示的发展现状和未来需求，针对InP QDs体系进行了综述，通过分析其研究现状，分析其发展问题和挑战，并对其进行了展望，期望为量子点及其电致发光器件的进一步探索研究提供一些启示和帮助，推动无镉、低毒、高色纯度量子点体系的发展。

本文通过分析目前显示器用的高均匀宽角度灯珠的光学要求，采用新型非朗伯（non-Lambertian）分布封装Micro-LED芯片，实现了宽光束、高均匀性的微型LED芯片光珠。分析了在不同封装倾角、封装高度、封装材料、封装支架材料、蓝宝石厚度和图案化蓝宝石衬底尺寸下，使用由不同封装材料（铜、钛、铝和银）和材料类型（完全反射和完全吸收）组成的支架模拟固定灯珠的光输出效率和出光角度的变化情况。研究发现通过调整材料、芯片和封装参数，可以得到一个、两个或三个光束，具有贴片灯珠的宽角度、高均匀性的远场光分布特性，满足当前LED和LCD的显示要求。

Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.

量子点因具有量子产率高、吸收范围宽、发光光谱窄、发光波长可调等优异的光电特性，使其在显示中展现出巨大的应用前景。化学溶液法合成的量子点不仅具有制备工艺简单和成本低廉等优势，而且也可通过多种方式实现高分辨率的显示器件。量子点优异的电致发光和光致发光特性，使其在显示领域具有重要的研究价值。电致发光的量子点发光二极管，在材料合成和器件结构的研究都获得了快速的发展，为实现商业化的显示器件提供了必要基础。利用量子点的光致发光显示器件获得了更广的色域，呈现出了更丰富的视觉效果。本文从量子点的特性、电致发光和光致发光出发，介绍了量子点在显示中的应用，总结了量子点器件的研究现状，分析了在器件发展中存在的问题。

近眼显示器可将数字世界与物理世界无缝融合，有望成为下一代增强现实显示终端。视网膜投影显示（Retinal projection displays，RPD）技术因其具有无辐辏-聚焦冲突、高光效、大视场等优点，是近眼显示领域的研究热点之一。本文回顾了RPD技术的发展，阐述了RPD的基本工作原理，综述了RPD及其出瞳拓展方面的最新进展，并对其未来的前景进行了展望。未来通过结合全息波前调控与全息光学元件（HOE）的优点，有望实现大出瞳、高系统自由度的轻薄化RPD近眼显示。

增强现实显示技术近年来发展迅速，已成为全球信息技术及产业的研究热点和发展重点，有望彻底改变人们感知和处理各种数字信息的方式。同时，微显示技术和光学技术的最新进展为增强现实显示技术的进一步发展指明了方向。本文分析了人眼视觉系统对增强现实头戴式显示器的光学性能要求，将目前增强现实头戴式显示器可实现的规格与之进行比较，说明了现阶段增强现实显示技术的发展水平和面临的主要挑战；重点阐述了增强现实显示技术中各种微显示器和光学组合器的基本原理和所能达到的参数指标，说明了它们的技术先进性和可实现性，同时对它们的发展前景进行了展望。