为满足某型光束指向装置高分辨率、空间紧凑和低成本的需求，结合其负载小、转速低的实际应用特点，设计了一种偏置型扭轮摩擦传动机构。该机构的变传动比特性通过改变主动轮与从动轮的扭角实现，为优选扭角设计区间，研究了扭角对机构位移特性的影响。在分析偏置型扭轮摩擦传动机构运动学特性及扭轮接触区受力、变形情况的基础上，建立了偏置型扭轮摩擦传动的刚柔耦合动力学模型，通过物理样机试验和多体动力学仿真分析，开展了扭角对输出角速度稳定性和角位移分辨率的影响。结果表明：扭角越大，机构输出角速度的波动范围也较大，传动越不平稳。设计的传动机构在扭角不大于80°时能实现平稳传动，且在大扭角条件下，机构能实现0.005˚（18″）的低速微步进运动，输出分辨率优于单级圆柱齿轮传动。上述分析为偏置型扭轮摩擦传动机构在光束指向装置传动系统中的应用提供了一种新的思路。

Two-dimensional (2D) semiconductors have captured broad interest as light emitters, due to their unique excitonic effects. These layer-blocks can be integrated through van der Waals assembly,i.e., fabricating homo- or heterojunctions, which show novel emission properties caused by interface engineering. In this review, we will first give an overview of the basic strategies that have been employed in interface engineering, including changing components, adjusting interlayer gap, and tuning twist angle. By modifying the interfacial factors, novel emission properties of emerging excitons are unveiled and discussed. Generally, well-tailored interfacial energy transfer and charge transfer within a 2D heterostructure cause static modulation of the brightness of intralayer excitons. As a special case, dynamically correlated dual-color emission in weakly-coupled bilayers will be introduced, which originates from intermittent interlayer charge transfer. For homobilayers and type Ⅱ heterobilayers, interlayer excitons with electrons and holes residing in neighboring layers are another important topic in this review. Moreover, the overlap of two crystal lattices forms moiré patterns with a relatively large period, taking effect on intralayer and interlayer excitons. Particularly, theoretical and experimental progresses on spatially modulated moiré excitons with ultra-sharp linewidth and quantum emission properties will be highlighted. Moiré quantum emitter provides uniform and integratable arrays of single photon emitters that are previously inaccessible, which is essential in quantum many-body simulation and quantum information processing. Benefiting from the optically addressable spin and valley indices, 2D heterostructures have become an indispensable platform for investigating exciton physics, designing and integrating novel concept emitters.Two-dimensional (2D) semiconductors have captured broad interest as light emitters, due to their unique excitonic effects. These layer-blocks can be integrated through van der Waals assembly,i.e., fabricating homo- or heterojunctions, which show novel emission properties caused by interface engineering. In this review, we will first give an overview of the basic strategies that have been employed in interface engineering, including changing components, adjusting interlayer gap, and tuning twist angle. By modifying the interfacial factors, novel emission properties of emerging excitons are unveiled and discussed. Generally, well-tailored interfacial energy transfer and charge transfer within a 2D heterostructure cause static modulation of the brightness of intralayer excitons. As a special case, dynamically correlated dual-color emission in weakly-coupled bilayers will be introduced, which originates from intermittent interlayer charge transfer. For homobilayers and type Ⅱ heterobilayers, interlayer excitons with electrons and holes residing in neighboring layers are another important topic in this review. Moreover, the overlap of two crystal lattices forms moiré patterns with a relatively large period, taking effect on intralayer and interlayer excitons. Particularly, theoretical and experimental progresses on spatially modulated moiré excitons with ultra-sharp linewidth and quantum emission properties will be highlighted. Moiré quantum emitter provides uniform and integratable arrays of single photon emitters that are previously inaccessible, which is essential in quantum many-body simulation and quantum information processing. Benefiting from the optically addressable spin and valley indices, 2D heterostructures have become an indispensable platform for investigating exciton physics, designing and integrating novel concept emitters.

提出一种基于S形-错位结构的全光纤马赫-曾德干涉仪（MZI）双参量传感器。该传感结构是采用单模光纤在光纤熔接机中通过简单的放电和熔接等步骤制备而成。顺时针扭转时, 传感器的传输光谱向短波长方向偏移; 逆时针扭转, 向长波长方向偏移。对传感器的实验研究结果表明，该传感器在光纤横截面上顺时针和逆时针两个旋转方向上的扭曲传感灵敏度分别为−223 pm/(rad·cm⁻¹), 140 pm/(rad·cm⁻¹)，且可实现扭转方向的判别，在一定应变范围内的应变灵敏度为0.145×10⁶ dB/ε(这里ε为应变)，且温度交叉灵敏度极小，可忽略不计。因此，这种基于单模光纤的纤芯-包层MZI双参量传感器具有传感灵敏度高，体积小巧，工艺简单，成本低廉且可判别扭转方向的优点，有望成为众多双参量测量操作中良好的候选仪器之一。

光纤环在磁场中产生磁致非互异性误差，成为制约高精度干涉型光纤陀螺（以下简称高精度光纤陀螺）应用的主要因素之一，而误差与磁场强度、光纤扭转率有关。由于光纤扭转导致的光纤环磁场灵敏度达到10 (°)·h⁻¹·Gs⁻¹以上，即使采用坡莫合金对磁场屏蔽，屏蔽效能仅能达到30 dB左右，难以满足高精度光纤陀螺的应用需求。文中通过等效电路模型和有限元仿真分析了屏蔽材料连接缝隙对屏蔽效能的影响，通过公式计算了扭转率对磁场灵敏度的影响。根据分析，提出了将屏蔽材料由螺钉连接改为激光焊接并对光纤进行退扭的改进方法。通过光纤退扭，光纤环磁场灵敏度降低了89.3%；通过对连接缝隙激光焊接，屏蔽效能由 31 dB 提高到 64 dB以上，磁场灵敏度由 0.026 5 (°)·h⁻¹·Gs⁻¹ 降低到了 0.000 4 (°)·h⁻¹·Gs⁻¹以下，且变温环境下陀螺零偏稳定性提高了7.5%以上。改进措施能够提高光纤环在磁场和温度环境下的精度，满足高精度光纤陀螺性能要求。