The AlGaN/GaN p–n junction has received extensive attention due to its capability of rapid photogenerated carrier separation in photodetection devices. The AlGaN/GaN heterojunction nanowires (NWs) have been especially endowed with new life for distinctive transport characteristics in the photoelectrochemical (PEC) detection field. A self-powered PEC ultraviolet photodetector (PEC UV PD) based on the p-AlGaN/n-GaN heterojunction NW is reported in this work. The n-GaN NW layer plays a crucial role as a current flow hub to regulate carrier transport, which mainly acts as a light absorber under 365 nm and carrier recombination layer under 255 nm illumination, which can effectively modulate photoresponsivity at different wavelengths. Furthermore, by designing the thicknesses of the NW layer, the photocurrent polarity reversal was successfully achieved in the constructed AlGaN/GaN NW PEC UV PD at two different light wavelengths. In addition, by combining with platinum decoration, the photoresponse performance could be further enhanced. Our work provides insight into transport mechanisms in the AlGaN/GaN NW PEC system, and offers a feasible and comprehensive strategy for further exploration of multifunctional optoelectronic devices.

输电线路异常放电检测对电网安全运行有重要意义。为了实现对输电线、绝缘子等电力设备异常放电的探测与定位，首先，基于遍历微元法建立了电晕放电紫外探测模型，研究了紫外光在大气信道的传输特性，给出不同电晕放电朝向条件下路径损耗与检测设备位置之间的关系。其次，考虑检测装置与放电点之间的相对位置关系，基于检测装置运动速度和接收紫外光功率极大值时的转向角度给出电晕放电点定位方法；基于检测距离和接收紫外光功率给出反演模拟放电功率的方法，进而判定模拟放电是否异常。最后，搭建实验平台，在户外对算法进行了实验验证。实验结果表明，在巡检距离分别为15 m、20 m、25 m和30 m时，该算法对放电点的定位误差小于8%，反演的模拟放电功率误差小于10%，证明了该算法的有效性。

峰化电容作为电磁脉冲模拟器中用于陡化脉冲输出的关键部件，在实际工程应用中易发生沿面放电和击穿现象，采用光电检测系统可对绝缘沿面放电现象进行有效分析。针对峰化电容器沿面放电监测的技术难题，研制了一套绝缘沿面放电过程光电检测系统，对绝缘沿面放电现象进行光电检测。首先提出了绝缘介质沿面放电过程光电探测系统的设计方案；其次，对系统的时延性能进行了评价；最后，完成了绝缘介质沿面放电过程定位实验，验证了光电探测系统的可行性。实验表明，该系统能够实现对放电区域的有效定位。