激光与光电子学进展, 2014, 51 (11): 110002, 网络出版: 2014-11-07
硅基IV 族光电器件研究进展（二）——光电探测器 
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Progress in the Study of Si-Based Group IV Optoelectronic Devices (II)——Photodetectors
探测器 硅基光电子 光电探测器 近红外探测 硅基光互连 光学器件 detectors silicon-based photoelectronics photodetector near infrared detection silicon-based optical intercommunication optical devices
摘要
基于Ge、GeSn 等IV 族材料的硅基探测器与Si CMOS 工艺兼容性好，成本低廉，并且易于与硅基波导器件集成，因而具有非常重要的应用价值。介绍了中国科学院半导体研究所在相关硅基IV 族合金材料外延制备及相关器件方面的研究，重点介绍在硅基Ge 面入射探测器、波导型探测器、吸收电荷倍增分离型(SACM)结构雪崩光电探测器以及GeSn 光电探测器方面的一些研究进展。
Abstract
Group IV material based photodetectors, such as the Si/Ge and Si/GeSn photodetectors, have the advantages of lower cost, high reliability, compatibility with CMOS technology and integration with the waveguide devices. Therefore it can be widely applied in the photo detection systems. Our recent progress on the Group IV material epitaxy and the device application on photodetectors is introduced. The emphasis is on the advance of the normal-incident/waveguide Si/Ge photodetectors, SACM avanlanche photodetectors and GeSn photodetectors.
李冲, 张东亮, 薛春来, 李传波, 成步文, 王启明. 硅基IV 族光电器件研究进展（二）——光电探测器[J]. 激光与光电子学进展, 2014, 51(11): 110002. Li Chong, Zhang Dongliang, Xue Chunlai, Li Chuanbo, Cheng Buwen, Wang Qiming. Progress in the Study of Si-Based Group IV Optoelectronic Devices (II)——Photodetectors[J]. Laser & Optoelectronics Progress, 2014, 51(11): 110002.
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