通过理论计算获得ZnTe/Si(211)与ZnTe/GaAs(211)异质结构样品室温下的热应变分布与曲率半径, 并采用激光干涉仪测量两个样品室温下的曲率半径。研究发现, 在(211)面上进行异质外延, 两个互相垂直的晶向方向[1-1-1]和[01-1]的应变分布呈现各向异性, 且沿两个方向上的表面曲率半径亦存在差异。ZnTe/GaAs(211)样品的激光干涉测量结果与理论计算较为吻合, 均为同一数量级的表面曲率半径方向为负的张应变, ZnTe/Si(211)样品的测量结果则存在较大差异。由于Si衬底在高温脱氧的过程中产生了表面曲率半径方向为正的塑性形变, 在一定程度上降低了外延ZnTe后异质结构的弯曲程度, 减小了热失配应变。

The distribution of thermal strain and curvature radius of ZnTe/Si(211) and ZnTe/GaAs(211) heterostructure samples were analyzed by theoretical calculation and laser interferometer measurement at room temperature. The results showed that the strain profiles and curvature radius of ZnTe grew on asymmetry(211) surface, are asymmetric along in-plane direction along[1-1-1]and[01-1]. The laser interference measurement result of the ZnTe/GaAs(211) sample conformed to the theoretical calculation with the radius of curvature, which are the same order of magnitude and both are in negative direction, indicating the tensile strain. But for the ZnTe/Si(211) sample, the measurement result showed much difference. The plastic deformation was formed during the high temperature deoxidation process of Si substrate, which produced heterostructure bending with positive radius of curvature. The plastic deformation of Si substrate reduced the bending degree of ZnTe/Si(211) heterostructure, so the thermal mismatch strain was also reduced.