结合X射线衍射技术以及逐层化学 腐蚀剥离损伤层的方法，定量分析了InSb晶体 由于切割、研磨、抛光等工艺所引入的损伤层的深度，并探讨了 损伤层结构及引入因素。研究结果表明，切割加工是引入InSb晶 片表面损伤层的主要工序，其表面损伤层的深度达 到16 μm左右；双面研磨的InSb晶片表面的损伤层深度约 为12 μm；经机械化学抛光加工后的InSb晶片表面的损伤层深 度明显减小，约为2 μm。

Combining with the X-ray diffraction technique and the layer-by-layer chemical etch method for peeling damage layers, the depth of the damage layer in InSb crystal introduced by cutting, lapping and polishing was analyzed quantitatively. The structures and causes of damage layers were discussed. The research result showed that cutting was the major process for introducing damage layer on the surface of InSb wafers. The depth of the damage layer introduced by cutting was up to 16 microns. The depth of the damage layer introduced by double-face lapping was about 12 microns. The depth of the damage layer introduced by mechanical-chemical polishing obviously decreased. It was about 2 microns.