采用扫描电容显微镜分析了平面型PIN In0.52Al0.48As/In0.53Ga0.47As/ In0.52Al0.48As短波红外探测器盲元产生的原因, 利用半导体器件仿真工具Sentaurus TCAD对探测器中的盲元特性进行了模拟, 并利用制备的Au/P-In0.52Al0.48As传输线结构芯片对P电极的欧姆接触进行优化.研究结果表明, P电极与扩散区外的N－-In0.52Al0.48As帽层形成导电通道导致了盲元的产生, 优化后Au与P-In0.52Al0.48As帽层之间具有更低的比接触电阻为3.52×10－4 Ω·cm－2, 同时Au在高温快速热退火过程中的流动被抑制, 从而降低了盲元产生的概率.

The blind pixels existing in planner PIN type In0.52Al0.48As/In0.53Ga0.47As/ In0.52Al0.48As short wavelength infrared detector were analyzed with the aid of scanning capacitance microscopy technique. And the simulation of blind pixels by Sentaurus TCAD was also presented. In order to eliminate the blind pixels, the transfer line model chip was fabricated to optimize the ohmic contact of Au electrode on P-In0.52Al0.48As. The result shows that a conductive chanel formed between the P electrode and the N－-In0.52Al0.48As cap layer outside the diffusion region resultes in blind pixel generation. Fourthermore, the special contact resistivity which is 3.52×10－4 Ω·cm－2 of Au on P-In0.52Al0.48As was obatined and the problem of Au flowing occurred in rapid thermal processing was suppressed after optimization, so that the probability of blind pixels generation was reduced.